MMBT3906LP
40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006
Features
BV
CEO
> -40V
I
C
= -200mA High Collector Current
P
D
= 1000mW Power Dissipation
0.60mm
2
Package Footprint, 13 times Smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Complementary NPN Type MMBT3904LP
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
NiPdAu,
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.0008 grams (Approximate)
ADVANCE INFORMATION
C
X1-DFN1006-3
B
B
E
C
E
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information
(Note 4)
Product
MMBT3906LP-7
MMBT3906LP-7B
Notes:
Marking
3N
3N
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http//www.diodes.com/products/packages.html.
Marking Information
From date code 1527 (YYWW),
this changes to:
3N
MMBT3906LP-7
Top View
Dot Denotes Collector Side
3N
Top View
Bar Denotes Base and Emitter Side
3N
3N
3N = Product Type Marking Code
3N
MMBT3906LP-7B
Top View
Bar Denotes Base and Emitter Side
3N
3N
3N
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
1 of 7
www.diodes.com
3N
3N
3N
3N
May 2015
© Diodes Incorporated
MMBT3906LP
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-40
-40
-6.0
-200
-200
Unit
V
V
V
mA
mA
ADVANCE INFORMATION
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage and Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
P
D
R
JA
R
JL
T
J
, T
STG
Value
400
1000
310
120
120
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated
MMBT3906LP
Thermal Characteristics
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
ADVANCE INFORMATION
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 310°C/W
Duty Cycle, D = t1/ t2
0.0001
0.01
1
t1, PULSE DURATION TIME (sec)
Fig. 1 Transient Thermal Resistance
100
10,000
D = Single Pulse
0.001
0.000001
1,000
P
(PK)
, PEAK TRANSI ENT POI WER (W)
Single Pulse
R
JA
= 310°C/W
100
R
JA(t)
= r
(t)
* R
JA
T
J
- T
A
= P * R
JA(t)
10
1
0.1
1E-06
0.0001
0.01
1
100
10,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
3 of 7
www.diodes.com
May 2015
© Diodes Incorporated
MMBT3906LP
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 9)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
I
CBO
I
BL
Min
-40
-40
-6.0
60
80
100
60
30
-0.65
2.0
0.1
100
3.0
300
Max
-50
-50
-50
300
-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60
35
35
225
75
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= -100µA, I
E
= 0
I
C
= -10.0mA, I
B
= 0
I
E
= -100µA, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
V
CB
= -30V, I
E
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
ADVANCE INFORMATION
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(sat)
V
BE(sat)
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
t
d
t
r
t
s
t
f
V
V
pF
pF
kΩ
x 10
-4
µS
MHz
ns
ns
ns
ns
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
MMBT3906LP
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
0.20
I
B
= -2mA
I
B
= -1.6mA
I
B
= -1.8mA
400
350
T
A
= 150°C
V
CE
= 1V
-I
C
, COLLECTOR CURRENT (A)
0.16
I
B
= -1.4mA
I
B
= -1.2mA
h
FE
, DC CURRENT GAIN
300
T
A
= 125°C
ADVANCE INFORMATION
0.12
I
B
= -1mA
I
B
= -0.8mA
250
200
T
A
= 85°C
0.08
I
B
= -0.6mA
I
B
= -0.4mA
T
A
= 25°C
150
100
50
0.04
I
B
= -0.2mA
T
A
= -55°C
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I
C
/I
B
= 10
0
1
10
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
I
C
/I
B
= 20
1
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.01
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
Gain = 10
1.2
Gain = 10
1.0
1.0
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
T
A
= 150°C
0.6
T
A
= 25°C
T
A
= 150°C
0.4
T
A
= 85°C
T
A
= 125°C
0.4
T
A
= 125°C
T
A
= 85°C
0.2
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.2
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
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