BC846AW - BC850CW
Taiwan Semiconductor
Small Signal Product
NPN Transistor
FEATURES
- Low reverse current, high reliability
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-323
MECHANICAL DATA
- Case: SOT-323 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight: 5 ± 0.5 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
BC846AW/BW/CW
BC847AW/BW/CW
Collector-Base Voltage
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
BC846AW/BW/CW
BC847AW/BW/CW
Collector-Emitter Voltage
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
BC846AW/BW/CW
BC847AW/BW/CW
Emitter-Base Voltage
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Collector Current
Peak Collector Current
Junction and Storage Temperature Range
I
C
I
CM
T
J
, T
STG
V
EBO
V
CEO
V
CBO
SYMBOL
P
D
VALUE
200
80
50
30
30
50
65
45
30
30
45
6
6
5
5
5
0.1
0.2
-55 to + 150
A
A
°C
V
V
V
UNIT
mW
Document Number: DS_S1502002
Version: B15
BC846AW - BC850CW
Taiwan Semiconductor
Small Signal Product
PARAMETER
Collector-Base Breakdown Voltage
at I
C
= 10
μA
BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Collector-Emitter Breakdown Voltage
at I
C
= 10 mA
BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Emitter-Base Breakdown Voltage
at I
E
= 1
μA
BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Collector Cut-off Current at V
CB
= 30 V
Emitter Cut-off Current at V
EB
= 5 V
DC Current Gain
at V
CE
= 5 V , I
C
= 2 mA
Collector-Emitter Saturation Voltage
Transition Frequency
Base Emitter Voltage
Collector Output Capacitance
BC846AW - BC850AW
BC846BW - BC850BW
BC846CW - BC850CW
I
C
= 10mA , I
B
= 0.5 mA
I
C
= 100mA , I
B
= 5 mA
V
CE
= 5 V , I
C
= 10 mA , f = 100 MHz
V
CE
= 5 V , I
C
= 2 mA
V
CE
= 5 V , I
C
= 10 mA
V
CB
= 10 V , I
E
= 0 , f = 1MHz
SYMBOL
MIN
80
50
MAX
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
100
220
450
800
0.25
0.60
-
0.70
0.77
4.50
UNIT
V
CBO
30
30
50
65
45
V
V
(BR)CEO
30
30
45
6
6
V
V
EBO
5
5
5
V
I
CBO
I
EBO
h
FE
-
-
110
200
420
-
-
100
0.58
-
-
nA
nA
-
-
-
V
MHz
V
pF
V
CE(sat)
f
T
V
BE
C
ob
Document Number: DS_S1502002
Version: B15
BC846AW - BC850CW
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Fig.1 Normalized DC Current Gain
10
h
FE
, Normalized DC Current Gain
V
CE
= 10 V
V, Voltage (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
0.1
1
10
100
1000
0.0
0.1
Fig.2 "Saturation" and "On" Voltages
V
BE(sat)
@ I
C
/ I
B
= 10
V
BE(OFF)
@ V
CE
= 10 V
1
V
CE(sat)
@ I
C
/ I
B
= 10
1
10
100
I
C
, Collector Current (mAdc)
I
C
, Collector Current (mAdc)
Fig.3 Collector Saturation Region
2.0
I
C
=200mA
V
CE
, Collector-Emitter Voltage (V)
(mV/
o
1.6
C)
1.4
1
Fig.4 Base-Emitter Current (mA)
-55
o
C to +125
O
C
1.2
0.8
I
C
=100mA
I
C
=50mA
I
C
=20mA
I
C
=10mA
Θ
VB
, Temperature Coefficient
100
1.8
2.2
0.4
2.6
0.0
0.01
0.1
1
I
B
, Base Current (mA)
10
3
0.1
1
10
100
I
C
, Collector Current (mA)
Fig.5 Capacitances
10
f
T
, Current-Gain-Bandwidth Product (MHz)
1000
Fig.6 Current-Gain-Bandwidth Product
C, Caoacitance (pF)
C
Ib
100
V
CE
= 10 V
C
Ob
1
0.1
1
10
100
10
0.1
1
10
100
V
R
, Reverse Voltage (V)
I
C
, Collector Current (mAdc)
Document Number: DS_S1502002
Version: B15
BC846AW - BC850CW
Taiwan Semiconductor
Small Signal Product
Fig.7 DC Collector Current (mA)
10
h
FE
, DC Current Gain (Normalized)
V
CE
= 5 V
V, Voltage (V)
1
0.8
0.6
0.4
Fig. 8 "On" Voltage
V
BE(sat)
@ I
C
/ I
B
= 10
V
BE(OFF)
@ V
CE
= 10 V
1
V
CE(sat)
@ I
C
/ I
B
= 10
0.2
0.1
0.1
1
10
100
1000
I
C
, Collector Current(mA)
0
0.1
1
10
I
C
, Collector Current (mA)
100
1000
Fig.9 Collector Saturation Region
2.0
-1
Fig.4 Bae-Emitter Temperature Coefficient
-55
o
C to +125
O
C
V
CE
, Collector-Emitter Voltage (V)
(mV/
o
Θ
VB
, Temperature Coefficient
1.6
I
C
=200mA
I
C
=100mA
I
C
=50mA
I
C
=20mA
I
C
=10mA
C)
-1.4
1.2
-1.8
Θ
VB
for V
BE
0.8
-2.2
0.4
-2.6
0.0
0.01
0.1
1
I
B
, Base Current (mA)
10
100
-3
0.1
1
10
100
1000
I
C
, Collector Current (mA)
Fig.11 Capacitance
100
1000
Fig.12 Current-Gain-Bandwidth Product
V
CE
= 5 V
f
T
, Current-Gain-Bandwidth
C, Capacitance (pF)
C
lb
10
100
C
Ob
1
0.1
1
10
100
10
0.1
1
10
100
1000
V
R
, Reverse Voltage (V)
I
C
, Collector Current (mA)
Document Number: DS_S1502002
Version: B15
BC846AW - BC850CW
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
BC846AW RFG
Green compound code
Packing code
Part no.
PACKAGE OUTLINE DIMENSIONS
SOT-323
DIM.
A
B
C
D
E
F
Unit (mm)
Min
1.80
1.15
0.15
1.20
2.00
0.80
Max
2.20
1.35
0.40
1.40
2.45
1.10
Unit (inch)
Min
0.071
0.045
0.006
0.047
0.079
0.031
Max
0.087
0.053
0.016
0.055
0.096
0.043
SUGGEST PAD LAYOUT
Unit (mm)
Typ.
2.80
0.70
0.90
1.90
1.00
Unit (inch)
Typ.
0.110
0.028
0.035
0.075
0.039
DIM.
Z
X
Y
C
E
MARKING
Part No.
BC846AW
BC847AW
BC848AW
BC849AW
BC850AW
Marking
1A
1E
1E
1E
1E
Part No.
BC846BW
BC847BW
BC848BW
BC849BW
BC850BW
Marking
1B
1F
1F
1F
1F
Part No.
BC846CW
BC847CW
BC848CW
BC849CW
BC850CW
Marking
1C
1G
1G
1G
1G
Document Number: DS_S1502002
Version: B15
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