1.5SMC SERIES
Taiwan Semiconductor
CREAT BY ART
1500W, 6.8V - 200V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Typical I
R
less than 1μA above 10V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AB (SMC)
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
R
θJC
R
θJA
T
J
T
STG
VALUE
1500
6.5
200
3.5 / 5.0
15
50
- 55 to +150
- 55 to +150
UNIT
Watts
Watts
A
Volts
°C/W
°C
°C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25°C Per Fig. 2
Note 2: V
F
=3.5V on 1.5SMC6.8 - 1.5SMC91 Devices and V
F
=5.0V on 1.5SMC100 - 1.5SMC200 Devices
Devices for Bipolar Applications
1. For Bidirectional Use C or CA Suffix for Types 1.5SMC6.8 - Types 1.5SMC200A
2. Electrical Characteristics Apply in Both Directions
Document Number: DS_D1409027
Version: M15
1.5SMC SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
10
125
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
tr=10μs
Peak Value
I
PPM
IFSM, PEAK FORWARD SURGE CURRENT (A)
200
180
160
140
120
100
80
60
40
20
0
1
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
8.3ms Single Half Sine Wave
Half Value-I
PPM
/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
UNIDIRECTIONAL
BIDRECTIONA
VR=0
1000
100
f=1.0MHz
Vsig=50mVp-p
10
1
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
VR-RATED
STAND-OFF
VOLTAGE
Document Number: DS_D1409027
Version: M15
1.5SMC SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown Voltage
V
BR
(V)
(Note 1)
Min
1.5SMC62
1.5SMC62A
1.5SMC68
1.5SMC68A
1.5SMC75
1.5SMC75A
1.5SMC82
1.5SMC82A
1.5SMC91
1.5SMC91A
1.5SMC100
1.5SMC100A
1.5SMC110
1.5SMC110A
1.5SMC120
1.5SMC120A
1.5SMC130
1.5SMC130A
1.5SMC150
1.5SMC150A
1.5SMC160
1.5SMC160A
1.5SMC170
1.5SMC170A
1.5SMC180
1.5SMC180A
1.5SMC200
1.5SMC200A
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
D
limit is doubled.
4. For bidirectional use C or CA suffix for types 1.5SMC6.8 - 1.5SMC200A
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
FLJ
FMJ
FNJ
FPJ
FQJ
FRJ
FSJ
FTJ
FUJ
FVJ
FWJ
FXJ
FYJ
FZJ
GDJ
GEJ
GFJ
GGJ
GHJ
GKJ
GLJ
GMJ
GNJ
GPJ
GQJ
GRJ
GSJ
GTJ
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
Max
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-Off
Voltage
V
WM
(V)
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
138.0
145.0
146.0
154.0
162.0
171.0
Maximum
@ V
WM
I
D
(μA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Current I
PPM
(A) (Note 2)
17
18
16
17
14
15
13
13.9
12
12.6
10.9
11.4
9.9
10.3
9.1
9.5
8.4
8.7
7.3
7.6
6.8
7.1
6.4
6.7
6.1
6.4
5.4
5.7
Maximum
@ I
PPM
Vc (V)
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
Maximum
Coefficient
of V
BR
(%/°C)
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
GENERAL
PART
NUMBER
Device
Marking
Code
Reverse Leakage Peak Pulse Clamping Voltage Temperature
Document Number: DS_D1409027
Version: M15
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
