Drain-Source Body Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= - 10 A, dI/dt = 100 A/µs
I
F
= - 10 A, V
GS
= 0 V
- 0.8
35
-2
33
- 50
- 100
- 1.5
53
-3
50
A
V
ns
A
nC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
SUD50P04-08
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 10
V
thru 5
V
R
DS(on)
- On-Resistance (Ω)
80
I
D
- Drain Current (A)
V
GS
= 4
V
0.012
V
GS
= 4.5
V
0.009
V
GS
= 10
V
0.006
0.015
60
40
20
V
GS
= 3
V
0
0.0
0.003
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
V
DS
- Drain-to-Source
Voltage
(V)
I
D
- Drain Current (A)
Output Characteristics
10
0.030
On-Resistance vs. Drain Current
R
DS(on)
- On-Resistance (Ω)
8
I
D
- Drain Current (A)
0.024
6
0.018
T
J
= 150 °C
0.012
T
J
= 25 °C
0.006
4
T
C
= 25 °C
2
T
C
= 125 °C
0
0
1
2
T
C
= - 55 °C
3
4
0.000
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Transfer Characteristics
100
V
GS
- Gate-to-Source
Voltage
(V)
T
C
= - 55 °C
g
fs
- Transconductance (S)
On-Resistance vs. Gate-to-Source Voltage
10
I
D
= 20 A
8
V
DS
= 20
V
6
V
DS
= 10
V
4
V
DS
= 32
V
75
T
C
= 25 °C
T
C
= 125 °C
50
25
2
0
0
10
20
30
40
50
0
0
30
60
90
120
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
Transconductance
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
Gate Charge
www.vishay.com
3
SUD50P04-08
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
- 1.0
- 1.3
I
S
- Source Current (A)
10
T
J
= 150 °C
V
GS(th)
(V)
- 1.6
I
D
= 250
µA
T
J
= 25 °C
1
- 1.9
- 2.2
0.1
0.0
0.3
0.6
0.9
1.2
- 2.5
- 50
- 25
0
25
50
75
100
125
150
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
8000
- 43
Threshold Voltage
6000
C - Capacitance (pF)
V
DS
- Drain-to-Source
Voltage
(V)
I
D
= 250
µA
- 45
C
iss
4000
- 47
2000
C
oss
C
rss
0
0
10
20
30
40
- 49
- 51
- 50
- 25
0
25
50
75
100
125
150
V
DS
- Drain-to-Source
Voltage
(V)
T
J
- Junction Temperature (°C)
Capacitance
2.0
I
D
= 20 A
1.7
R
DS(on)
- On-Resistance
I
D
- Drain Current (A)
V
GS
= 10
V
(Normalized)
1.4
V
GS
= 4.5
V
Drain Source Breakdown vs. Junction Temperature
80
60
Package Limited
40
1.1
20
0.8
0.5
- 50
0
- 25
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
C
- Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
www.vishay.com
4
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
SUD50P04-08
Vishay Siliconix
TYPICAL CHARACTERISTICS
100
25 °C, unless otherwise noted
1000
Limited
by
R
DS(on)
*
100
100
µA
I
D
- Drain Current (A)
I
DAV
(A)
T
J
= 150 °C
10
T
J
= 25 °C
10
1 ms
10 ms, 100 ms
1 s, 10 s, DC
1
0.1
T
C
= 25 °C
Single Pulse
BVDSS
Limited
1
10
-5
10
-4
10
-3
10
-2
10
-1
0.01
0.1
1
10
100
Time (s)
Single Pulse Avalanche Current Capability vs. Time
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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