e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-2129 Rev. C, 31-Oct-11
1
Document Number: 65529
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS401EN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 10 V
V
GS
= - 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V
V
GS
= - 10 V
V
GS
= - 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= - 8.8 A, V
GS
= 0
V
DD
= - 20 V, R
L
= 14.2
Ω
I
D
≅
- 1.4 A, V
GEN
= - 10 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= - 4.5 V
V
DS
= - 20 V, I
D
= - 9.3 A
V
GS
= 0 V
V
DS
= - 20 V, f = 1 MHz
-
-
-
-
-
-
1.1
-
-
-
-
-
-
1565
245
170
17.7
5.6
8.1
1.95
11
10
36.5
10.2
-
- 0.8
1875
295
205
21.2
6.6
9.7
2.8
14
13
44
13
- 64
- 1.1
A
V
ns
Ω
nC
pF
g
fs
V
DS
= - 40 V
V
DS
= - 40 V, T
J
= 125 °C
V
DS
= - 40 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= - 12 A
I
D
= - 12 A, T
J
= 125 °C
I
D
= - 12 A, T
J
= 175 °C
I
D
= - 9 A
- 40
- 1.5
-
-
-
-
- 20
-
-
-
-
-
-
- 2.0
-
-
-
-
-
0.020
0.030
0.040
0.035
12
-
- 2.5
± 100
-1
- 50
- 150
-
0.029
0.043
0.051
0.047
-
S
Ω
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= - 15 V, I
D
= - 7 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2129 Rev. C, 31-Oct-11
2
Document Number: 65529
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS401EN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
V
GS
= 10
V
thru 5
V
24
24
V
GS
= 4
V
18
I
D
- Drain Current (A)
30
Vishay Siliconix
I
D
- Drain Current (A)
18
12
12
T
C
= 25 °C
6
T
C
= 125 °C
0
T
C
= - 55 °C
0
1
2
3
4
5
6
V
GS
= 3
V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
6
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
30
0.10
Transfer Characteristics
T
C
= 25 °C
18
R
DS(on)
- On-Resistance (Ω)
24
g
fs
- Transconductance (S)
T
C
= - 55 °C
0.08
0.06
V
GS
= 4.5
V
0.04
V
GS
= 10
V
0.02
12
T
C
= 125 °C
6
0
0
4
8
12
I
D
- Drain Current (A)
16
20
0.00
0
6
12
18
24
30
I
D
- Drain Current (A)
Transconductance
2500
6
On-Resistance vs. Drain Current
V
DS
= 20 V
I
D
= 9.3 A
2000
C - Capacitance (pF)
C
iss
1500
V
GS
- Gate-to-Source
Voltage
(V)
5
4
3
1000
C
oss
500
C
rss
0
0
10
20
30
V
DS
- Drain-to-Source
Voltage
(V)
40
2
1
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
S11-2129 Rev. C, 31-Oct-11
3
Document Number: 65529
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS401EN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1.8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 11 A
1.6
V
GS
= 10
V
10
100
Vishay Siliconix
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
1.4
V
GS
= 4.5
V
1.2
0.1
1.0
0.8
0.01
0.6
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
0.25
1.1
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.20
V
GS(th)
Variance
(V)
0.8
I
D
= 250 µA
0.5
I
D
= 5 mA
0.2
0.15
0.10
0.05
T
J
= 25 °C
0
1
T
J
= 150 °C
- 0.1
0.00
2
3
4
5
6
7
8
V
GS
- Gate-to-Source
Voltage
(V)
9
10
- 0.4
- 50
- 25
0
25
50
75 100 125
T
J
- Temperature (°C)
150
175
On-Resistance vs. Gate-to-Source Voltage
- 40
I
D
= 1 mA
- 42
Threshold Voltage
V
DS
- Drain-to-Source
Voltage
(V)
- 44
- 46
- 48
- 50
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S11-2129 Rev. C, 31-Oct-11
4
Document Number: 65529
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
