TS13002HV
High Voltage NPN Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
450V
900V
0.8A
0.6V @ I
C
=0.2A, I
B
=0.04A
Features
●
●
High Voltage
High Speed Switching
Block Diagram
Structure
●
●
Silicon Triple Diffused Type
NPN Silicon Transistor
Ordering Information
Part No.
TS13002HVCT B0G
TS13002HVCT A3G
Package
TO-92
TO-92
Packing
1kpcs / Bulk
2kpcs / Ammo
Note:
“G” denote for Halogen Free Product
Absolute Maximum Ratings
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Maximum Power Dissipation @ T
C
= 25 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
o
Symbol
V
CBO
V
CEO
V
EBO
DC
Pulse
I
C
P
tot
T
J
T
STG
Limit
900
450
9
0.8
1.6
0.8
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Thermal Performance
Parameter
Junction to Ambient Thermal Resistance
Symbol
RӨ
JA
Limit
125
Unit
o
C/W
1/6
Version: A14
TS13002HV
High Voltage NPN Transistor
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
Frequency
Rise Time
Storage Time
Fall Time
V
CE
=10V, I
C
=0.1A
V
CC
=125V, I
C
=0.1A
I
B1
=I
B2
=20mA
t
p
=25µs, D=≤1%
f
T
t
r
t
STG
t
f
5
--
--
--
--
--
2
--
--
1
5
1
MHz
µs
µs
µs
Resistive Load Switching Time (Ratings)
I
C
=1mA, I
B
=0
I
C
=10mA, I
E
=0
I
E
=1mA, I
C
=0
V
CB
=900V, I
E
=0
V
CE
=450V, I
C
= 0
V
EB
=9V, I
C
= 0
I
C
=0.2A, I
B
=0.04A
I
C
=0.2A, I
B
=0.04A
V
CE
=5V, I
C
=5mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=300mA
h
FE
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
V
CE(SAT)
V
BE(SAT)
15
25
20
900
450
9
--
--
--
--
--
--
--
--
--
--
0.2
0.9
--
--
--
--
--
--
100
100
100
0.6
1.5
--
40
40
V
V
V
µA
µA
µA
V
V
Conditions
Symbol
Min
Typ
Max
Unit
Note:
pulse test: pulse width
≤300µs,
duty cycle
≤2%
2/6
Version: A14
TS13002HV
High Voltage NPN Transistor
Electrical Characteristics Curves
(Ta = 25
o
C, unless otherwise noted)
Figure 1. Safe Operation Area
Figure 2. DC Current Gain
Figure 3. Vce(sat) vs. IC
Figure 4. Vbe(sat) vs. IC
Figure 5. Power Derating
3/6
Version: A14
TS13002HV
High Voltage NPN Transistor
TO-92 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
4/6
Version: A14
TS13002HV
High Voltage NPN Transistor
TO-92 Ammo Pack Mechanical Drawing
Tape Dimension
Item Description
Base of Package to Lead Bend
Component Height
Lead Clinch Height
Component Base Height
Component Top to Lead Bend
Component Alignment (side / side)
Component Alignment (front / back)
Feed Hole Pitch
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold – down Tape Width
Hold – down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
Note: All dimensions are in millimeter.
5/6
Version: A14
Symbol
b
Ha
H0
H1
H2
Pd
Hd
P0
P1
F1
d
L
L1
t
t1
W
W0
W1
W2
D0
S
Dimension
3.0 (typ.)
23.57 (typ.)
16.0
±0.5
19.0
±0.5
8.0 (max)
1.02 (max)
0.79 (max)
12.7
±0.3
6.25
±0.4
2.5
±0.3
0.46 (typ.)
10.9 (max)
5.31 (typ.)
0.81
±0.2
0.5
±0.2
18.0
±0.5
0.5
±0.2
9.0
±0.7
6.0
±0.2
4.0
±0.2
0.1 (max)
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