MMDT3906
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
A
C
2
B
1
E
1
SOT-363
Dim
B C
Min
0.10
1.15
2.00
0.30
1.80
—
0.90
0.25
0.10
0°
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8°
A
B
C
D
F
M
Mechanical Data
•
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Ordering and Date Code Information: See Page 4
Marking Information: K3N, See Page 4
Weight: 0.006 grams (approximate)
K
E
2
B
2
C
1
0.65 Nominal
H
H
J
K
L
M
α
J
D
C
2
B
1
E
1
F
L
All Dimensions in mm
E
2
B
2
C
1
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
(Note 1)
P
d
R
θ
JA
T
j
, T
STG
Value
-40
-40
-5.0
-200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30124 Rev. 11 - 2
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MMDT3906
© Diodes Incorporated
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Min
-40
-40
-5.0
⎯
⎯
60
80
100
60
30
⎯
-0.65
⎯
⎯
⎯
2.0
0.1
100
3.0
250
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
-50
-50
⎯
⎯
300
⎯
⎯
-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60
⎯
4.0
Unit
V
V
V
nA
nA
Test Condition
I
C
= -10μA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
V
CE
= -30V, V
EB(OFF)
= -3.0V
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
-4
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
5. Short duration pulse test used to minimize self-heating effect.
V
CE(SAT)
V
BE(SAT)
V
V
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
NF
pF
pF
kΩ
x 10
⎯
μS
MHz
dB
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -100μA,
R
S
= 1.0kΩ, f = 1.0kHz
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
t
d
t
r
t
s
t
f
35
35
225
75
ns
ns
ns
ns
DS30124 Rev. 11 - 2
2 of 4
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MMDT3906
© Diodes Incorporated
200
P
D
, POWER DISSIPATION (mW)
100
C
IBO
, INPUT CAPACITANCE (pF)
C
OBO
, OUTPUT CAPACITANCE (pF)
150
100
10
50
0
0
25
50
75 100 125 150 175
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
200
1
0.1
1
100
10
V
CB
, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
1,000
V
CE(SAT)
, COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
10
h
FE
, DC CURRENT GAIN
100
1
10
0.1
1
0.1
100
10
1
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs.
Collector Current
1,000
0.01
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
V
BE(SAT)
, BASE-EMITTER (V)
SATURATION VOLTAGE
0.9
0.8
0.7
0.6
I
C
I
B
= 10
0.5
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
100
DS30124 Rev. 11 - 2
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MMDT3906
© Diodes Incorporated
Ordering Information
Device
MMDT3906-7-F
Notes:
6.
(Note 6)
Packaging
SOT-363
Shipping
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3N YM
K3N YM
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
2003
P
May
5
DS30124 Rev. 11 - 2
K3N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2004
R
Jun
6
2005
S
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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MMDT3906
© Diodes Incorporated
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