TSM2N7000K
60V N-Channel MOSFET
TO-92
Pin Definition:
1. Source
2. Gate
3. Drain
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
(Ω)
5 @ V
GS
= 10V
5.5 @ V
GS
= 5V
I
D
(mA)
100
100
Features
●
●
●
●
Low On-Resistance
ESD Protection
High Speed Switching
Low Voltage Drive
Block Diagram
Ordering Information
Part No.
TSM2N7000KCT B0
TSM2N7000KCT A3
Package
TO-92
TO-92
Packing
1Kpcs / Bulk
2Kpcs / Ammo
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous @ T
A
=25ºC
Pulsed
Drain Reverse Current
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Continuous @ T
A
=25ºC
Pulsed
Symbol
V
DS
V
GS
I
D
I
DM
I
DR
I
DMR
P
D
T
J
T
J
, T
STG
Limit
60
±20
300
Unit
V
V
mA
700
300
mA
700
400
+150
-55 to +150
mW
o
o
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
5 sec.
Symbol
T
L
RӨ
JA
Limit
10
357
Unit
S
ºC/W
1/6
Version: B12
TSM2N7000K
60V N-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
= 0V, I
D
= 10µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= 60V, V
GS
= 0V
V
GS
= 10V, I
D
= 100mA
V
GS
= 5V, I
D
= 100mA
V
DS
= 10V, I
D
= 200mA
I
S
= 300mA, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
g
fs
V
SD
Min
60
1.0
--
--
--
--
100
--
Typ
--
--
--
--
3
3.6
--
0.9
Max
--
2.5
±10
1.0
5
Unit
V
V
uA
uA
Ω
5.5
--
1.2
mS
V
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 10V, I
D
= 250mA,
V
GS
= 4.5V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Q
g
C
iss
C
oss
C
rss
--
--
--
--
0.4
7.32
3.42
7.63
--
--
--
--
nC
pF
Turn-On Delay Time
V
DD
= 30V, R
G
= 10Ω
t
d(on)
--
--
25
35
--
--
nS
I
D
= 100mA, V
GEN
= 10V,
Turn-Off Delay Time
t
d(off)
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
Version: B12
TSM2N7000K
60V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Forward Transfer Admittance vs. Drain Current
On-Resistance vs. Gate-Source Voltage
Power Derating Curve
3/6
Version: B12
TSM2N7000K
60V N-Channel MOSFET
TO-92 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.30
4.70
0.169
0.185
4.30
4.70
0.169
0.185
13.53 (typ)
0.532 (typ)
0.39
0.49
0.015
0.019
1.18
1.28
0.046
0.050
3.30
3.70
0.130
0.146
1.27
1.31
0.050
0.051
0.33
0.43
0.013
0.017
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
4/6
Version: B12
TSM2N7000K
60V N-Channel MOSFET
TO-92 Ammo Pack Mechanical Drawing
5/6
Version: B12
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