TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Qg (typ)
Value
600
4
9.5
Unit
V
Ω
nC
Features
●
●
100% Avalanche Tested
G-S ESD Protection Diode Embedded
Block Diagram
Ordering Information
Part No.
TSM2N60ECH C5G
Package
TO-251
Packing
75pcs / Tube
TSM2N60ECP ROG
TO-252
2.5kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
N-Channel MOSFET with ESD Protection
Absolute Maximum Ratings
(T
C
= 25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Repetitive Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Symbol
V
DS
V
GS
Tc = 25℃
Tc = 100℃
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dV/dt
T
J
T
STG
Limit
600
±30
2
1.43
8
2
5.2
66
52.1
0.416
4.5
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
W/℃
V/ns
℃
℃
Single Pulse Avalanche Energy
(Note 3)
Total Power Dissipation
Peak Diode Recovery dV/dt
T
C
= 25℃
Derate above T
C
= 25℃
(Note 4)
Operating Junction Temperature
Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R
ӨJC
R
ӨJA
Limit
2.4
110
Unit
℃/W
℃/W
1/7
Version: A14
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
Electrical Specifications
(T
C
= 25℃ unless otherwise noted)
Parameter
Static
(Note 5)
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
(Note 6)
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 1A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
J
= 125℃
V
GS
= ±30V, V
DS
= 0V
V
DS
= 30V, I
D
= 1A
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
Min
600
--
3
--
--
--
--
Typ
--
3.2
--
--
--
--
3
Max
--
4
5
1
10
±100
--
Unit
V
Ω
V
µA
µA
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 7)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings and Characteristic
(Note 5)
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulse Drain-Source Diode Forward Current
Diode-Source Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 2A
V
GS
= 0V, I
S
= 2A
dI
F
/dt = 100A/µs
V
DD
= 300V , V
GS
= 10V ,
R
G
= 25W, I
D
= 2A
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
DS
= 480V, I
D
= 2A,
V
GS
= 10V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
9.5
2.1
3.9
362
40
7.2
--
--
--
--
--
--
pF
nC
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
21
22
41
21
--
--
--
--
ns
I
S
I
SM
V
SD
t
rr
Q
rr
--
--
--
--
--
--
--
--
238
0.8
2
8
1.5
--
--
A
A
V
ns
nC
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. V
DD
= 50V, L= 30.5mH, I
AS
= 2A, R
G
= 25W, Starting T
J
= 25℃
4. I
SD
≤ 2A, di/dt ≤ 200A/µs, V
DD
≤ BV
DS
, Starting T
J
= 25℃
5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
6. For DESIGN AID ONLY, not subject to production testing.
7. Switching time is essentially independent of operating temperature.
2/7
Version: A14
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
(T
C
= 25℃, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: A14
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
Electrical Characteristics Curve
(T
C
= 25℃, unless otherwise noted)
Drain Current vs. Case Temperature
BV
DSS
vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area
Normalized Transient Impedance
4/7
Version: A14
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/7
Version: A14
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