TSM22P10
-100V P-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
V
GS
= -10V
R
DS(on)
(max)
Q
g
V
GS
= -4.5V
Value
-100
140
Unit
V
mΩ
170
42
nC
Application
l
l
l
Networking
Load Switch
LED applications
Block Diagram
Ordering Information
Part No.
TSM22P10CZ C0G
TSM22P10CI C0G
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
P-Channel MOSFET
Note:
“G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings
(Tc = 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Symbol
V
DS
V
GS
Tc = 25°C
Tc = 100°C
I
D
I
DM
P
D
T
J
T
STG
Limit
TO-220
ITO-220
-100
±25
-22
-14
-88
125
150
-55 to +150
48
Unit
V
V
A
A
A
W
°C
°C
Pulsed Drain Current
(Note 2)
Power Dissipation @ T
C
= 25°C
Operating Junction Temperature
Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R
ӨJC
R
ӨJA
Limit
TO-220
1.0
62
ITO-220
2.6
Unit
°C/W
1/7
Version: A14
TSM22P10
-100V P-Channel Power MOSFET
Electrical Specifications
(T
C
= 25°C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Dynamic
Total Gate Charge
(Note 3,4)
Gate-Source Charge
(Note 3,4)
Gate-Drain Charge
(Note 3,4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
(Note 3,4)
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
(Note 3,4)
Turn-Off Fall Time
(Note 3,4)
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source Diode
Forward Current
Diode-Source Forward Voltage
Integral reverse diode in
the MOSFET
V
GS
= 0V, I
S
= -1A
I
S
I
SM
V
SD
--
--
--
--
--
--
-22
-88
-1.1
A
A
V
V
DD
= -30V, I
D
= -1A,
V
GS
= -10V, R
G
=6Ω
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
--
--
--
--
--
--
--
--
ns
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
V
DS
= -50V, I
D
= -20A,
V
GS
= -10V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
42
8
5.6
2250
130
90
--
--
--
--
--
--
pF
nC
V
GS
= 0V, I
D
= -250µA
V
GS
= -10V, I
D
= -20A
V
GS
= -4.5V, I
D
= -10A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, T
J
= 125°C
V
GS
= ±25V, V
DS
= 0V
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
-100
--
--
-1
--
--
--
--
115
130
--
--
--
--
--
140
170
-3
-1
-10
±100
mΩ
V
µA
nA
V
Conditions
Symbol
Min
Typ
Max
Unit
Note:
1.
Limited by maximum junction temperature
2.
Pulse width limited by safe operating area
3.
Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
4.
Switching time is essentially independent of operating temperature.
2/7
Version: A14
TSM22P10
-100V P-Channel Power MOSFET
Electrical Characteristics Curve
Continuous Drain Current vs. T
C
-I
D
, Continuous Drain Current (A)
Normalized On Resistance (mW)
Normalized R
DS
(on) vs. T
J
T
C
, Case Temperature (°C)
Threshold Voltage vs. Junction Temperature
Normalized Gate Threshold Voltage (V)
-V
GS
, Gate to Source Voltage (V)
T
J
, Junction Temperature (°C)
Gate Charge Waveform
T
J
, Junction Temperature (°C)
Maximum Safe Operating Area (TO-220)
Qg, Gate Charge (nC)
Maximum Safe Operating Area (ITO-220)
-I
D
, Continuous Drain Current (A)
-I
D
, Continuous Drain Current (A)
-V
DS
, Drain to Source Voltage (V)
-V
DS
, Drain to Source Voltage (V)
3/7
Version: A14
TSM22P10
-100V P-Channel Power MOSFET
Electrical Characteristics Curve
Normalized Thermal Transient Impedance (TO-220)
Normalized Thermal Response (R
θJC
)
Normalized Thermal Transient Impedance (ITO-220)
Normalized Thermal Response (R
θJC
)
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
4/7
Version: A14
TSM22P10
-100V P-Channel Power MOSFET
TO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
G
Y
WW
F
= Halogen Free Product
= Year Code
= Week Code (01~52)
= Factory Code
5/7
Version: A14
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