TSM10N60
600V N-Channel MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
600
R
DS(on)
(Ω)(max)
0.75 @ V
GS
=10V
I
D
(A)
10
Features
●
●
Advanced high dense cell design.
High Power and Current handing capability.
Block Diagram
Application
●
●
Power Supply.
Lighting.
Ordering Information
Part No.
TSM10N60CZ C0
TSM10N60CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(T
C
= 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
o
Symbol
V
DS
V
GS
T
C
= 25 C
T
C
= 100 C
o
Limit
TO-220
600
±30
10
6
ITO-220
Unit
V
V
A
A
I
D
a
I
DM
c
a
40
166
41
- 55 to +150
50
Total Power Dissipation @ T
C
=25C
Single Pulsed Avalanche Energy
P
DTOT
E
AS
T
J
, T
STG
W
mJ
o
Operating Junction and Storage Temperature Range
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
Symbol
RӨ
JC
RӨ
JA
0.75
Limit
2.5
63
Unit
o
o
C/W
C/W
Notes a:
Current limited by package
Notes b:
Pulse width limited by the Maximum junction temperature
Notes c:
L=0.75mH, I
AS
=10A, V
DD
=50V, R
G
=25Ω, Starting T
j
=25℃
1/9
Version: C13
TSM10N60
600V N-Channel MOSFET
Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
a
Conditions
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
DS
= 600V, V
GS
= 0V
V
GS
= 10V, I
D
= 5A
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
Q
g
Min
600
2
--
--
--
Typ
--
3.1
--
--
0.61
Max
--
4
±100
20
0.75
Unit
V
V
nA
µA
Ω
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
b
--
--
--
--
--
--
45.8
11.5
16
1738
195
26.3
--
--
--
--
--
--
pF
nC
V
DS
= 300V, I
D
= 10A,
V
GS
= 10V
Q
gs
Q
gd
C
iss
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Forward On Voltage
a
t
d(on)
V
DD
= 300V, R
G
= 10Ω,
I
D
= 10A, V
GS
= 10V,
t
r
t
d(off)
t
f
--
--
--
--
33.6
7.4
68
15.2
--
--
--
--
nS
I
S
=10A, V
GS
=0V
VSD
Notes a:
Pulse test: PW
≤
300µS, duty cycle
≤
2%
Notes b:
For DESIGN AID ONLY, not subject to production testing.
Notes c:
Switching time is essentially independent of operating temperature.
--
0.8
1.5
V
2/9
Version: C13
TSM10N60
600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
E
AS
Test Circuit & Waveform
3/9
Version: C13
TSM10N60
600V N-Channel MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
4/9
Version: C13
TSM10N60
600V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
Threshold Voltage
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
5/9
Version: C13
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
