TSM028N04PQ56
40V N-Channel MOSFET
PDFN56
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
40
2.8
78
Unit
V
mΩ
nC
Features
●
●
●
Low On-Resistance
Low Input Capacitance
Low Gate Charge
Block Diagram
Ordering Information
Part No.
Package
Packing
TSM028N04PQ56 RLG
PDFN56
2.5kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
.
N-Channel MOSFET
Absolute Maximum Ratings
(T
C
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed
(Note 3)
Symbol
V
DS
V
GS
T
C
=25°C
T
A
=25°C
,
Limit
40
±20
140
42
550
201
83
4.4
-55 to +150
-55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
I
D
I
DM
E
AS
(Note 1)
Single Pulse Avalanche Energy L=0.1mH
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
(Note 2)
T
C
=25°C
T
A
=25°C
P
D
T
STG
T
J
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R
ӨJC
R
ӨJA
Limit
1.5
28
Unit
o
o
C/W
C/W
1/6
Version: A14
TSM028N04PQ56
40V N-Channel MOSFET
Electrical Specifications
(T
J
=25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
V
GS
=0V, I
S
=30A
I
S
= 30A, dI/dt = 100A/µs
V
SD
t
fr
--
--
--
32
1.3
--
V
ns
V
GS
= 10V, V
DD
= 20V,
R
G
= 3Ω, I
D
= 13A
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
21
6
98
17
--
--
--
--
ns
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
V
DD
= 20V, I
D
= 30A,
V
GS
= 10V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
78
22
4.7
4222
889
398
--
--
--
--
--
--
pF
nC
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
40
--
2
--
--
--
2.1
3
--
--
--
2.8
4
1
±100
V
mΩ
V
µA
nA
Conditions
Symbol
Min
Typ
Max
Unit
Reverse Recovery Charge
Q
fr
--
120
--
nC
Notes:
1.
Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
2.
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference
is defined at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is
determined by the user’s board design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
3.
The maximum current rating is limited by package.
2/6
Version: A14
TSM028N04PQ56
40V N-Channel MOSFET
Electrical Characteristics Curves
Output Characteristics
Gate Threshold Voltage
I
DS
=250µA
Gate Source On Resistance
Drain-Source On Resistance
Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
3/6
Version: A14
TSM028N04PQ56
40V N-Channel MOSFET
Electrical Characteristics Curves
Power Derating
Drain Current vs. Junction Temperature
Safe Operation Area
Transient Thermal Impedance
Capacitance
Gate Charge
4/6
Version: A14
TSM028N04PQ56
40V N-Channel MOSFET
PDFN56 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/6
Version: A14
传感器
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