TSG40N120CE
N-Channel IGBT with FRD.
TO-264
Pin Definition:
1. Gate
2. Collector
3. Emitter
PRODUCT SUMMARY
V
CES
(V)
1200
V
GES
(V)
±20
I
C
(A)
40
General Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This
device is well suited for the resonant or soft switching application such as induction heating, microwave oven,
etc.
Features
●
●
●
1200V NPT Trench Technology
High Speed Switching
Low Conduction Loss
Block Diagram
Ordering Information
Part No.
TSG40N120CE C0
Package
TO-264
Packing
25pcs / Tube
NPT Trench IGBT
Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
Pulsed Collector Current *
Diode Forward Current (T
C
=100
℃
)
Diode Pulse Forward Current
Max Power Dissipation
Operating Junction Temperature
Storage Temperature Range
* Repetitive rating: Pulse width limited by max. junction temperature
T
J
=25 C
T
J
=100 C
o
o
Symbol
V
CES
V
GES
T
C
=25 C
T
C
=100 C
o
o
Limit
1200
±20
64
Unit
V
V
A
A
A
A
A
W
I
C
I
CM
I
F
I
FM
P
D
T
J
T
STG
40
120
40
240
208
83
-55 to +150
-55 to +150
ºC
o
C
1/10
Version: B12
TSG40N120CE
N-Channel IGBT with FRD.
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
IGBT
DIODE
Symbol
RӨ
JC
RӨ
JA
Limit
0.6
2.2
25
Unit
o
C/W
Electrical Specifications
(Tc=25
o
C unless otherwise noted)
Parameter
Static
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 600V, I
C
= 40A,
V
GE
= 15V
V
CC
= 600V, I
C
= 40A,
R
G
= 5Ω, V
GE
= 15V
Inductive Load, T
J
=125 C
o
Conditions
V
GE
= 0V, I
C
= 1mA
V
CE
= 1200V, V
GE
= 0V
V
GE
= 20V, V
CE
= 0V
V
GE
= V
CE
, I
C
= 40mA
V
GE
= 15V,I
C
=40A, T
J
=25ºC
V
GE
= 15V,I
C
=40A, T
J
=125ºC
Symbol
BV
CES
I
CES
I
GES
V
GE(TH)
V
CE(SAT)
V
CE(SAT)
C
IES
C
OES
C
RES
t
d(on)
t
r
Min
1200
--
--
4.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
6.0
2
2.5
5150
150
100
41
82
200
85
5.8
1.5
7.3
45
76
212
189
5.6
3.3
8.9
210
50
115
Max
--
1
±250
8.0
2.8
--
--
--
--
--
--
--
170
8.7
2.3
11
--
--
--
--
5
5
13.4
315
75
173
Unit
V
mA
nA
V
V
V
V
CE
= 30V, V
GE
= 0V,
f = 1.0MHz
pF
V
CC
= 600V, I
C
= 40A,
R
G
= 5Ω, V
GE
= 15V
Inductive Load, T
J
=25 C
o
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
nS
mJ
nS
mJ
nC
2/10
Version: B12
TSG40N120CE
N-Channel IGBT with FRD.
Electrical Specifications of the DIODE
(Tc=25
o
C unless otherwise noted)
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
I
F
= 40A,
dl/dt=200A/us
I
F
= 40A,
Conditions
T
J
=25 C
T
J
=125 C
T
J
=25 C
T
J
=125 C
T
J
=25 C
T
J
=125 C
T
J
=25 C
T
J
=125 C
o
o
o
o
o
o
o
o
Symbol
V
FM
t
fr
I
fr
Q
fr
Min
--
--
--
--
--
--
--
--
Typ
2.8
2.9
220
3 10
24
36
2600
5580
Max
--
--
--
--
--
--
--
--
Unit
V
V
ns
A
nC
3/10
Version: B12
TSG40N120CE
N-Channel IGBT with FRD.
Electrical Characteristics Curve
(Tc = 25
o
C, unless otherwise noted)
Output Characteristics
Saturation voltage characteristics
Saturation voltage vs. collector current
Saturation voltage vs. gate bias
Saturation voltage vs. gate bias
Capacitance characteristics
4/10
Version: B12
TSG40N120CE
N-Channel IGBT with FRD.
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Turn on time vs. gate resistance
Turn off time vs. gate resistance
Switching loss vs. gate resistance
Turn on time vs. collector current
Turn off time vs. collector current
Switching loss vs. collector current
5/10
Version: B12
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