TSC5802D
Taiwan Semiconductor
High Voltage Fast-Switching NPN Power Transistor
FEATURES
●
●
●
●
●
High Voltage Capability
Fast Switching Speed
Pb-free plating
RoHS compliant
Halogen-free mold compound
KEY PERFORMANCE PARAMETERS
PARAMETER
BV
CEO
BV
CBO
I
C
V
CE(SAT)
I
C
=0.7A, I
B
=0.14A
VALUE
450
1050
2.5
0.5
UNIT
V
V
A
V
APPLICATION
●
●
Electronic Ballast
Switch mode power supply
TO-251
(IPAK)
TO-252
(DPAK)
Notes:
Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage @ V
BE
=0V
Emitter-Base Voltage
Collector Current
Collector Peak Current (tp <5ms)
Base Current
Base Peak Current (tp <5ms)
Power Total Dissipation @ T
A
=25ºC
Maximum Operating Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
DTOT
T
J
T
STG
LIMIT
1050
450
15
2.5
4
1.5
3
30
+150
-55 to +150
UNIT
V
V
V
A
A
A
A
W
o
o
C
C
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
LIMIT
4.17
100
UNIT
o
o
C/W
C/W
Document Number: DS_P0000180
1
Version: B15
TSC5802D
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Rise Time
(Note 2)
CONDITIONS
I
C
=0.5mA
I
C
=5mA
I
E
=1mA
V
CE
=400V, I
B
=0
V
CB
=950V, I
E
=0
I
C
=0.7A, I
B
=0.14A
I
C
=2A, I
B
=0.6A
I
C
=2A, I
B
=0.6A
V
CE
=5V, I
C
=0.1A
V
CE
=3V, I
C
=0.5A
I
C
=1A
V
CC
=5V, I
C
=0.5A
L=2mH
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
CBO
V
CE(SAT)
1
V
CE(SAT)
2
V
BE(SAT)
1
h
FE
1
h
FE
2
V
F
t
r
t
STG
t
f
E
AR
MIN
1050
450
15
--
--
---
---
--
50
18
--
--
2.5
--
5
TYP
--
--
--
10
--
--
1.5
1.0
70
23
--
--
3
--
--
MAX
--
--
--
250
10
0.5
3.0
1.6
100
50
1.5
1
3.5
1.2
--
UNIT
V
V
V
µA
µA
V
V
V
V
µs
µs
µs
mJ
Storage Time
(Note 2)
Fall Time
(Note 2)
Repetitive Avalanche Energy
Notes:
1.
2.
Pulse test: ≤380µs, duty cycle ≤ 2%
For DESIGN AID ONLY, not subject to production testing.
Document Number: DS_P0000180
2
Version: B15
TSC5802D
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSC5802DCH C5G
TSC5802DCP ROG
PACKAGE
TO-251
TO-252
PACKING
75pcs / Tube
2,500pcs / 13” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000180
3
Version: B15
TSC5802D
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
(Unit: Millimeters)
TO-251 (IPAK)
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)
Document Number: DS_P0000180
4
Version: B15
TSC5802D
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
(Unit:
Millimeters)
TO-252 (DPAK)
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)
Document Number: DS_P0000180
5
Version: B15
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