SPT6060/3
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
•
•
•
•
•
•
•
•
High Voltage Rating - 350V Sustaining
Fast Switching Capabilities / Fast Turn-off Time
Thermally Stable Structure for Reliability in Power Cycling
Overload Short Circuit Rating
High Voltage Switching Power Supplies
Inverter / Regulators
Deflection Circuits
Pulse-Width-Modulated (PWM) System Control Circuits
20 AMP
350 VOLTS
NPN DARLINGTON
TRANSISTOR
TO-3
APPLICATIONS:
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Base Current
Total Device Dissipation
Derate above 25
o
C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
CASE OUTLINE: TO-3
Pin Out:
.135 MAX
Case - Collector
1 - Base
2 - Emmiter
Ø.875
MAX
SYMBOL
V
CEO
V
CBO
Continuous
Peak
Continuous
Peak
@ T
C
= 25
o
C
I
C
I
CM
I
B
I
BM
P
D
T
J,
T
STG
R
θJC
VALUE
350
350
20
40
4
6
125
1
-65 to +150
1
UNITS
Volts
Volts
Amps
Amps
W
W/
o
C
o
o
C
C/W
2x Ø.165
.151
SEATING PLANE
.525 MAX
.675
.655
2x R.188 MAX
2x .043
.038
.440
.420
2
2x .225
.205
1
.450
.250
2x .312 MIN
1.197
1.177
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0017B
SPT6060/3
SOLID STATE DEVICES, INC.
ELECTRICAL CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(I
C
= 2A, L = 2mH)
Collector Cutoff Current
(V
CE
= Rated Value, T
C
= 25
o
C)
Emitter Cutoff Current
(V
EB
= 4V
DC
, I
C
= 0)
Overload Short Circuit Rating
(V
CEO(sus)
= 300V, I
C
= 30A, I
B
= 300mA, Time = 10:
s
)
Forward Bias Safe Operating Area
V
CE
= 6.25V, t = 1sec
V
CE
= 12.5V, t = 1sec
V
CE
= 300V, t = 1sec
I
C
= 10A
DC
I
C
= 15A
DC
I
C
= 20A
DC
I
C
= 10A
DC
,
I
C
= 10A
DC
,
I
C
= 20A
DC
,
Base-Emitter Saturation Voltage*
Small Signal Current Gain
(I
C
= 1A
DC ,
V
CE
= 10V
DC,
f = 1MHz)
Rise Time
Storage Time
Fall Time
V
CC
= 150V
DC ,
I
C
= 10A
DC
,
I
B1
= I
B2
= 1.0A
DC
,
t
P
= 4µs min.
I
B
= 2A
DC
I
B
= 1A
DC
I
B
= 2A
DC
FBSOA
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
SYMBOL
V
CEO(sus)
I
CEO
MIN
300
-
MAX
-
1.0
UNITS
V
DC
mA
DC
mA
DC
mJ
I
EBO
-
90
20
10
0.125
30
20
15
300
-
-
-
-
120
80
60
1.4
1.5
2.0
A
DC Current Gain*
(V
CE
= 5V
DC
)
Collector-Emitter Saturation Voltage*
H
FE
V
CE(SAT)
V
BE (SAT)
h
FE
t
r
t
s
t
f
-
-
10
-
-
-
V
DC
V
DC
I
C
= 10A
DC
, I
B
= 2A
DC
I
C
= 20A
DC
, I
B
= 2A
DC
2.5
3.0
0.4
-
2.5
1.0
µ
s
µ
s
µ
s
*Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0017B
ARM技术
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