PRELIMINARY
SPT165
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
•
•
•
•
•
•
•
BV
CEO
45V.
Very Low Leakage.
High Gain.
Stable Reference Voltage 0.002%/
o
C from 0 to 70
o
C.
Isolated Case.
Hermetic, Metal Case with Glass Seals.
150
o
C Operating Temperature.
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current,
T
C
#150
o
C
Base or Zener Current,
T
C
#150
o
C
Total Device Dissipation @ T
A
= 25
o
C
Derate above 25
o
C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
CASE OUTLINE: TO-33
4
10 mA
45 VOLTS
NPN (V
REF
) TRANSISTOR
TO-33
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
B,
I
Z
P
D
T
J,
T
STG
R
2JC
VALUE
45
45
3
10
6
250
2
-55 to +150
500
UNITS
Volts
Volts
Volts
mAmps
mAmps
mW
mW/
o
C
o
C
o
C/W
3
1
2
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0010A
PRELIMINARY
SPT165
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage *
(I
C
= 1.0mA
DC
)
Collector Cutoff Current
(V
CB
= 30V
DC
)
DC Current Gain*
(I
C
= 500:A
DC
, V
CE
= 3V
DC
)
Reference Voltage *
(V
CE
= 3V
DC
)
*Pulse Test: Pulse Width = 300us, Duty Cycle = 2%
SYMBOL
BV
CEO
I
CBO
H
FE
V
REF
MIN
45
-
10
6.3
MAX
-
1
120
7.7
UNITS
V
:A
V
DC
Microchip MCU
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