MMDT5451
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
One 5551-Type NPN
One 5401-Type PNP
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Complementary Pair
A
C
2
B
1
E
1
SOT-363
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
—
0.90
0.25
0.10
0°
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8°
B
C
D
F
M
E
2
B
2
C
1
G
H
K
0.65 Nominal
Mechanical Data
•
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: KNM, See Page 5
Ordering & Date Code Information: See Page 5
Weight: 0.006 grams (approximate)
H
J
K
L
M
α
J
D
F
L
E1, B1, C1 = PNP5401 Section
E2, B2, C2 = NPN5551 Section
All Dimensions in mm
Maximum Ratings, NPN 5551 Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
NPN5551
180
160
6.0
200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
(Note 1)
(Note 1, 2)
(Note 1)
I
C
P
d
R
θ
JA
T
j
, T
STG
Maximum Ratings, PNP 5401 Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
PNP5401
-160
-150
-5.0
-200
200
625
-55 to +150
Unit
V
V
V
mA
mW
K/W
°C
(Note 1)
(Note 1, 2)
(Note 1)
I
C
P
d
R
θ
JA
T
j
, T
STG
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Maximum combined dissipation.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30171 Rev. 9 - 2
1 of 5
www.diodes.com
MMDT5451
© Diodes Incorporated
Electrical Characteristics, NPN 5551 Section
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
C
obo
h
fe
f
T
NF
h
FE
@T
A
= 25°C unless otherwise specified
Min
180
160
6.0
⎯
⎯
80
80
30
⎯
⎯
⎯
50
100
⎯
Max
⎯
⎯
⎯
50
50
⎯
250
⎯
0.15
0.20
1.0
Unit
V
V
V
nA
μA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100°C
V
EB
= 4.0V, I
C
= 0
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 200μA,
R
S
= 1.0kΩ, f = 1.0kHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
⎯
V
V
V
CE(SAT)
V
BE(SAT)
6.0
250
300
8.0
pF
⎯
MHz
dB
Electrical Characteristics, PNP 5401 Section
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
6. Short duration pulse test used to minimize self-heating effect.
@T
A
= 25°C unless otherwise specified
Min
-160
-150
-5.0
⎯
⎯
50
60
50
⎯
⎯
⎯
40
100
⎯
Max
⎯
⎯
⎯
-50
-50
⎯
240
⎯
-0.2
-0.5
-1.0
Unit
V
V
V
nA
μA
nA
Test Condition
I
C
= -100μA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= 100°C
V
EB
= -3.0V, I
C
= 0
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
V
CE
= -10V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -200μA,
R
S
= 10Ω, f = 1.0kHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
⎯
V
V
C
obo
h
fe
f
T
NF
6.0
200
300
8.0
pF
⎯
MHz
dB
DS30171 Rev. 9 - 2
2 of 5
www.diodes.com
MMDT5451
© Diodes Incorporated
200
0.15
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
T
A
= -50°C
T
A
= 25°C
T
A
= 150°C
I
C
I
B
= 10
P
D
, POWER DISSIPATION (mW)
150
100
50
0
0
25
50
75 100 125 150 175
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature (Total Device)
200
0.04
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current (NPN5551)
1,000
V
CE
= 5V
1.0
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage
vs. Collector Current (NPN5551)
I
C
I
B
= 10
T
A
= 150°C
T
A
= 25°C
V
CE
= 5V
T
A
= -50°C
h
FE
, DC CURRENT GAIN
T
A
= 150°C
100
T
A
= 25°C
T
A
= -50°C
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs.
Collector Current (NPN5551)
100
100
1,000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
10.0
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
1.0
T
A
= 150°C
100
10
0.1
T
A
= -50°C
T
A
= 25°C
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current (NPN5551)
100
0.01
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 6, Collector Emitter Saturation Voltage
vs. Collector Current (PNP5401)
DS30171 Rev. 9 - 2
3 of 5
www.diodes.com
MMDT5451
© Diodes Incorporated
10,000
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 8, Base Emitter Voltage
vs. Collector Current (PNP5401)
100
T
A
= 150°C
T
A
= 25°C
V
CE
= 5V
T
A
= -50°C
1,000
h
FE
, DC CURRENT GAIN
100
10
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7, DC Current Gain vs. Collector Current (PNP5401)
1,000
V
CE
= 10V
1
f
t
, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 9, Gain Bandwidth Product
vs. Collector Current (PNP5401)
100
DS30171 Rev. 9 - 2
4 of 5
www.diodes.com
MMDT5451
© Diodes Incorporated
Ordering Information
Device
MMDT5451-7-F
Notes:
7.
(Note 7)
Packaging
SOT-363
Shipping
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KNM
KNM = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
Code
J
Month
Code
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
YM
2003
P
May
5
2004
R
Jun
6
2005
S
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30171 Rev. 9 - 2
5 of 5
www.diodes.com
MMDT5451
© Diodes Incorporated
淘e淘
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
