MMBT2222ALP4
40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Low Collector-Emitter Saturation Voltage, V
CE(sat)
Ultra-Small Leadless Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
Case: X2-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯
NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.0009 grams (Approximate)
X2-DFN1006-3
C
B
B
C
E
E
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information
(Note 4)
Product
MMBT2222ALP4-7B
Notes:
Marking
2S
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
2S
Top View
2S = Product Type Marking Code
Bar Denotes Base and Emitter Side
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
1 of 7
www.diodes.com
August 2012
© Diodes Incorporated
MMBT2222ALP4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
75
40
6
600
800
Unit
V
V
V
mA
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Lead (Note 7)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
θ
JA
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
460
1
272
120
110
-55 to +150
Unit
mW
W
°C/W
°C/W
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
≥
8,000
≥
400
Unit
V
V
JEDEC Class
3B
C
5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
2 of 7
www.diodes.com
August 2012
© Diodes Incorporated
MMBT2222ALP4
Thermal Characteristics
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 272°C/W
Duty Cycle, D = t1/ t2
0.0001
0.01
1
t1, PULSE DURATION TIME (sec)
Figure 1 Transient Thermal Resistance
100
10,000
0.001
0.000001
1,000
P
(PK)
, PEAK TRANSIENT POIWER (W)
Single Pulse
R
θ
JA
= 272
°
C/W
R
θ
JA(t)
= r
(t)
* R
θ
JA
T
J
- T
A
= P * R
θ
JA(t)
0.5
P
D
, POWER DISSIPATION (W)
0.4
100
0.3
10
0.2
1
0.1
R
θJA
= 272
°
C/W
0.1
1E-06
0
0.0001
0.01
1
100
10,000
t1, PULSE DURATION TIME (sec)
Figure 2 Single Pulse Maximum Power Dissipation
50
100
150
200
T
A
, AMBIENT TEMPERATURE (°C)
Figure 3 Power Dissipation vs. Ambient Temperature
0
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
3 of 7
www.diodes.com
August 2012
© Diodes Incorporated
MMBT2222ALP4
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
I
CBO
I
EBO
I
BL
Min
75
40
6
⎯
⎯
⎯
⎯
⎯
35
50
75
35
100
50
40
⎯
⎯
0.6
⎯
⎯
300
⎯
0.25
⎯
75
25
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
10
10
10
10
20
⎯
⎯
⎯
⎯
300
⎯
⎯
0.3
1.0
1.2
2.0
8
25
⎯
4.0
1.25
4.0
375
200
10
25
225
60
Unit
V
V
V
nA
nA
μA
nA
nA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
V
pF
pF
MHz
dB
kΩ
X 10
−4
⎯
µS
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CE
= 60V, V
EB(off)
= 3V
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= +125°C
V
EB
= 5V, I
C
= 0
V
CE
= 60V, V
EB(off)
= 3V
V
CE
= 10V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA, T
A
= -55°C
V
CE
= 10V, I
C
= 150mA
V
CE
= 1V, I
C
= 150mA
V
CE
= 10V, I
C
= 500mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 20V, I
C
= 20mA, f = 100MHz
V
CE
= 10V, I
C
= 100µA, R
S
= 1.0kΩ,
f = 1.0kHz
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS (Note 6)
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
SWICHING CHARACTERISTICS (Note 6)
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
V
CE(sat)
V
BE(sat)
C
obo
C
ibo
f
T
NF
h
ie
h
re
h
fe
h
oe
t
d
t
r
t
s
t
f
I
C
= 10mA, V
CE
= 10V, f = 1.0kHz
nS
V
CC
= 30V, V
BE(off)
= -0.5V,
I
C
= 150mA, I
B1
= 15mA
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
=15mA
6. Measured under pulsed conditions. Pulse width
≤
300μs. Duty cycle
≤2%.
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
4 of 7
www.diodes.com
August 2012
© Diodes Incorporated
MMBT2222ALP4
1,000
0.5
I
C
I
B
= 10
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
T
A
= 125°C
0.4
T
A
= 25°C
100
T
A
= -25°C
T
A
= +25°C
0.3
T
A
= 150°C
0.2
10
0.1
T
A
= -50°C
V
CE
= 1.0V
1
0.1
0
1
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 4 Typical DC Current Gain vs.
Collector Current
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Cobo
V
CE
= 5V
T
A
= -50°C
f = 1MHz
T
A
= 25°C
CAPACITANCE (pF)
Cibo
T
A
= 150°C
0.3
0.2
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
V
R
, REVERSE VOLTAGE (V)
Figure 7 Typical Capacitance Characteristics
2.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
I
C
= 30mA
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
I
C
= 300mA
100
10
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 8 Typical Gain-Bandwidth Product vs. Collector Current
1
1
0.1
100
1
10
I
B
, BASE CURRENT (mA)
Figure 9 Typical Collector Saturation Region
0.01
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
5 of 7
www.diodes.com
August 2012
© Diodes Incorporated
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