SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
FMMT551
C
E
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FMMT451
551
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
SYMBOL
V
(BR)CBO
V
CEO(sus)
MIN.
-80
-60
-5
-0.1
-0.1
-0.35
-1.1
50
10
150
25
150
MHz
pF
MAX.
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
UNIT
V
V
V
µ
A
µ
A
VALUE
-80
-60
-5
-2
-1
-200
500
-55 to +200
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-60V
V
EB
=-4V
UNIT
V
V
V
A
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
Emitter-Base Breakdown V
(BR)EBO
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
V
V
I
C
=-150mA, I
B
=-15mA*
I
C
=-150mA, I
B
=-15mA*
I
C
=-150mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 129
stm32/stm8
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