FMMT497
SOT23 NPN silicon planar high voltage high
performance transistor
Complementary part number - FMMT597
Device marking - 497
C
B
E
E
C
B
Pinout - top view
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Base current
Power dissipation at T
amb
=25°C
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
Value
300
300
5
500
1
200
500
-55 to +150
Unit
V
V
V
mA
A
mA
mW
°C
Issue 4 - November 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
FMMT497
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base
breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
turn on voltage
Static forward current
transfer ratio
Symbol
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
100
80
20
75
5
53
126
2.58
228
2%.
Min.
300
300
5
Typ.
Max
.
Unit
V
V
V
Conditions
I
C
= 100 A
I
C
= 10mA
(*)
I
E
= 100 A
V
CB
= 250V
V
CES
= 250V
V
EB
= 4V
I
C
= 100mA, I
B
= 10mA
I
C
= 250mA, I
B
= 25mA
I
C
= 250mA, I
B
= 25mA
I
C
= 250mA, V
CE
= 10V
I
C
= 1mA, V
CE
= 10V
100
100
100
0.2
0.3
1.0
1.0
nA
nA
nA
V
V
V
V
300
I
C
= 100mA, V
CE
= 10V
(*)
I
C
= 250mA, V
CE
= 10V
(*)
MHz
pF
ns
ns
s
ns
I
C
= 50mA, V
CE
= 10V
f = 100MHz
V
CB
= 10V, f = 1MHz
V
CC
= 100V, I
C
= 100mA,
Ib1 = -Ib2 = 10mA
Transition frequency
output capacitance
Switching performance
f
T
C
obo
td
tr
ts
tf
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
Issue 4 - November 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
FMMT497
Typical characteristics
0.6
0.5
0.6
+25 ° C
I
C
/I
B
=10
0.5
V
CE(sat)
-(V)
V
CE(sat)
-(V)
0.4
I
C
/I
B
=10
I
C
/I
B
=50
0.4
0.3
0.2
0.1
0
-55 °C
+25 °C
+100 °C
0.3
0.2
0.1
0
1mA
10mA
100mA
1A
1mA
10mA
100mA
1A
I
C
-Collector Current
I
C
-Collector Current
V
CE(sat)
v I
C
400
V
CE(sat)
v I
C
V
CE
=10V
0.9
0.8
I
C
/I
B
=10
h
FE
- Typical Gain
+100 °C
300
V
BE(sat)
- (V)
0.6
+25 °C
200
-55 °C
0.4
-55 °C
+25 °C
+100 °C
100
0.2
0
1mA
0
10mA
100mA
1A
1mA
10mA
100mA
1A
I
C
-Collector Current
I
C
-Collector Current
h
FE
V I
C
V
BE(sat)
v I
C
0.8
I
C
-Collector Current (A)
0.9
V
CE
=10V
1
V
BE(on)
- (V)
0.6
0.1
0.4
-55 °C
+25 °C
+100 °C
0.01
0.2
DC
1s
100ms
10ms
1ms
100µs
0
1mA
10mA
100mA
1A
0.001
0.1
1
10
100
1000
I
C
-Collector Current
V
CE
- Collector Emitter Voltage (V)
V
BE(on)
v I
C
Safe Operating Area
Issue 4 - November 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
FMMT497
Package outline - SOT23
E
e
b
3 leads
e1
L1
E1
D
A
A1
L
c
Dim.
A
A1
b
C
D
e
Millimeters
Min.
-
0.01
0.30
0.085
2.80
Max.
1.12
0.10
0.50
0.120
3.04
-
Inches
Min.
0.0004
0.012
0.003
0.110
Max.
0.044
0.004
0.020
0.008
0.120
Dim.
e1
E
E1
L
L1
-
Millimeters
Min.
2.10
1.20
0.25
0.45
-
Max.
2.64
1.40
0.62
0.62
-
1.90 NOM
Inches
Max.
0.083
0.047
0.018
0.018
-
Max.
0.104
0.055
0.024
0.024
-
0.075 NOM
0.95 NOM
0.0375 NOM
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 4 - November 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
FMMT497
Intentionally left blank
Issue 4 - November 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
PCB设计
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