FMMT494
120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23
Feature
BV
CEO
> 120V
I
C
= 1A Continuous Collector Current
I
CM
= 2A Peak Pulse Current
500mW Power Dissipation
h
FE
Characterised up to 1A for High Current Gain Hold Up
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (FMMT494Q)
Mechanical Data
Case: SOT23 (Type DN)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (Approximate)
SOT23 (Type DN)
C
E
C
B
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Part Number
FMMT494TA
FMMT494TC
Notes:
Compliance
AEC-Q101
AEC-Q101
Marking
494
494
Reel Size (inches)
7
13
Tape Width (mm)
8
8
Quantity per Reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SOT23 (Type DN)
494
494 = Product Type Marking Code
FMMT494
Document number: DS33095 Rev. 5 - 2
1 of 7
www.diodes.com
November 2017
© Diodes Incorporated
FMMT494
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
140
120
7
1
2
200
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
500
250
197
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
≥ 400
Unit
V
V
JEDEC Class
3A
C
5. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT494
Document number: DS33095 Rev. 5 - 2
2 of 7
www.diodes.com
November 2017
© Diodes Incorporated
FMMT494
Thermal Characteristics and Derating Information
1
0.6
Max Power Dissipation (W)
-I
C
Collector Current (A)
V
CE(sat)
Limit
15 x 15mm FR4 1oz Copper
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100 120 140 160
100m
DC
1s
100ms
10ms
15 x 15mm FR4
1oz Copper
1ms
100µs
10m
1m
1
10
100
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
Max Power Dissipation (W)
240
200
160
120
80
40
0
100µ
15 x 15mm FR4 1oz Copper
15 x 15mm FR4 1oz Copper
100
D=0.5
10
D=0.2
Single Pulse
D=0.05
D=0.1
1
1m
10m 100m
1
10
100
1k
0.1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
FMMT494
Document number: DS33095 Rev. 5 - 2
3 of 7
www.diodes.com
November 2017
© Diodes Incorporated
FMMT494
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
h
FE
Min
140
120
7
—
—
—
100
100
60
20
—
—
—
—
—
100
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
100
100
100
—
300
—
—
200
300
1.0
1.1
10
—
Unit
V
V
V
nA
nA
nA
—
Test Condition
I
C
= 100µA
I
C
= 1mA
I
E
= 100µA
V
CB
= 120V
V
EB
= 5V
V
CE
= 120V
I
C
= 1mA, V
CE
= 10V
I
C
= 250mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 1A, V
CE
= 10V
I
C
= 250mA, I
B
= 25mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, V
CE
= 10V
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1MHz
V
CE
= 50V, I
C
= 10mA,
f = 100MHz
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 8)
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
Output Capacitance
Transition Frequency
Notes:
V
CE(sat)
V
BE(on)
V
BE(sat)
C
obo
f
T
mV
V
V
pF
MHz
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
FMMT494
Document number: DS33095 Rev. 5 - 2
4 of 7
www.diodes.com
November 2017
© Diodes Incorporated
FMMT494
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
FMMT494
Document number: DS33095 Rev. 5 - 2
5 of 7
www.diodes.com
November 2017
© Diodes Incorporated
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