CMPD2836E
CMPD2838E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, SILICON
SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD2836E and
CMPD2838E are Enhanced versions of the CMPD2836
and CMPD2838 High Speed Switching Diodes.
These devices are manufactured by the epitaxial
planar process, in an epoxy molded surface mount
SOT-23 package, designed for high speed switching
applications.
FEATURED ENHANCED SPECIFICATIONS:
♦
BVR from 75V min to 120V min.
SOT-23 CASE
♦
VF from 1.2V max to 1.0V max.
The following configurations are available:
CMPD2836E
DUAL, COMMON ANODE
CMPD2838E
DUAL, COMMON CATHODE
MAXIMUM RATINGS:
(TA=25°C)
♦
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MARKING CODE: CA2E
MARKING CODE: CA6E
UNITS
120
200
300
350
-65 to +150
357
V
mA
mA
mW
°C
°C/W
SYMBOL
VRRM
IO
IFM
PD
TJ, Tstg
Θ
JA
♦
IR
♦
BVR
♦
VF
♦
VF
♦
VF
CT
trr
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
VR=80V
IR=100µA
IF=10mA
IF=50mA
IF=100mA
VR=0, f=1.0MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
100
120
150
0.72
0.84
0.92
1.5
0.85
0.95
1.0
4.0
4.0
UNITS
nA
V
V
V
V
pF
ns
♦
Enhanced specification
R3 (25-January 2010)
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