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CMLD2004G_15

产品描述HIGH VOLTAGE SWITCHING DIODE
文件大小503KB,共3页
制造商Central Semiconductor
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CMLD2004G_15概述

HIGH VOLTAGE SWITCHING DIODE

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CMLD2004G
SURFACE MOUNT SILICON
DUAL, ISOLATED
HIGH VOLTAGE
SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD2004G
contains two (2) isolated high voltage silicon switching
diodes, manufactured by the epitaxial planar process,
epoxy molded in an SOT-563 surface mount package.
These devices are designed for applications requiring
high voltage capability.
MARKING CODE: DG
SOT-563 CASE
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IR
IR
BVR
VF
CJ
trr
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
240
300
200
225
625
4.0
1.0
250
-65 to +150
500
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
VR=240V
100
VR=240V, TA=150°C
100
IR=100μA
IF=100mA
VR=0, f=1.0MHz
IF=IR=30mA, Irr=3.0mA, RL=100Ω
300
1.0
5.0
50
UNITS
nA
μA
V
V
pF
ns
R2 (15-June 2015)

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