CMKD3003DO
SURFACE MOUNT
DUAL, ISOLATED, OPPOSING
LOW LEAKAGE SILICON
SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD3003DO
contains two (2) Isolated Opposing Silicon Switching
Diodes, manufactured by the epitaxial planar process,
epoxy molded in a ULTRAmini™ surface mount
package. These devices are designed for switching
applications requiring extremely low leakage.
MARKING CODE: C303
SOT-363 CASE
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Average Rectified Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0µs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
180
200
600
700
2.0
1.0
350
-65 to +150
357
UNITS
V
mA
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
µA
nA
µA
V
V
V
V
V
V
V
pF
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
VR=125V
1.0
IR
VR=125V, TA=150°C
3.0
IR
IR
BVR
VF
VF
VF
VF
VF
VF
CT
VR=180V
VR=180V, TA=150°C
IR=5.0µA
IF=1.0mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
VR=0, f=1.0MHz
200
0.62
0.72
0.80
0.83
0.87
0.90
0.72
0.83
0.89
0.93
1.10
1.15
4.0
10
5.0
R0 (19-September 2011)
DSP 与 ARM 处理器
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