MMDTA06
80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features & Benefits
BV
CEO
> 80V
I
CM
= 1A Peak Pulse Current
General purpose NPN transistors ideally suited for low power
amplification and switching applications
Dual transistors in a single SOT26 package taking half the
footprint of two equivalent transistors in SOT23
Epitaxial Planar Die Construction
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
ADVANCE INFORMATION
SOT26
C1
C2
B1
E2
B2
C1
E1
C2
B1
B2
E1
Top View
Device Symbol
E2
Top View
Pin-Out
Ordering Information
(Note 4)
Product
MMDTA06-7
Notes:
Marking
A06
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT26
A06
A06 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
May 2015
MMDTA06
Document Number: DS35114 Rev: 2 - 2
1 of 8
www.diodes.com
© Diodes Incorporated
MMDTA06
Absolute Maximum Ratings
(@T
A
= +25°C unless otherwise specified)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
100
80
6
500
1
Unit
V
V
V
mA
A
ADVANCE INFORMATION
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Notes 6 & 7)
P
D
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 5 & 7)
(Note 8)
R
JA
R
JL
T
J
, T
STG
Symbol
Value
1.28
10.3
0.90
7.14
97
140
103
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t
5 seconds.
7. For a dual device with one active die.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMDTA06
Document Number: DS35114 Rev: 2 - 2
2 of 8
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May 2015
© Diodes Incorporated
MMDTA06
Thermal Characteristics and Derating Information
ADVANCE INFORMATION
1.0
I
C
Collector Current (A)
1
V
CE(sat)
Limited
Max Power Dissipation (W)
0.8
0.6
0.4
0.2
0.0
25mm x 25mm
1oz Cu
100m
DC
1s
100ms
10ms
25mm x 25mm 1oz Cu
T
amb
=25°C
Single Pulse
1ms
100µs
10m
100m
1
10
100
0
20
40
60
80
100 120 140 160
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
140
120
100
80
60
40
20
Maximum Power (W)
25mm x 25mm 1oz Cu
T
amb
=25°C
100
25mm x 25mm 1oz Cu
T
amb
=25°C
Single Pulse
D=0.5
10
D=0.2
Single Pulse
D=0.05
D=0.1
1
100µ
1m
10m 100m
1
10
100
1k
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
MMDTA06
Document Number: DS35114 Rev: 2 - 2
3 of 8
www.diodes.com
May 2015
© Diodes Incorporated
MMDTA06
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
C
obo
Min
100
80
6
100
100
100
Typ
163
7
Max
100
100
100
0.25
1.20
Unit
V
V
V
nA
nA
nA
V
V
MHz
pF
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 80V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, V
CE
= 1V
I
C
= 100mA, V
CE
= 1V
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, V
CE
= 1V
V
CE
= 2V, I
C
= 10mA, f = 100MHz
V
CB
= 10V, f = 1MHz
ADVANCE INFORMATION
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-base Cut-Off Current
ON CHARACTERISTICS
(Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Note:
10. Measured under pulsed conditions. Pulse width
300
µ
s. Duty cycle
2%.
MMDTA06
Document Number: DS35114 Rev: 2 - 2
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May 2015
© Diodes Incorporated
MMDTA06
Typical Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
ADVANCE INFORMATION
Typical Gain (hFE)
125°C
V
CE
=1V
250
0.3
I
C
/I
B
=10
125°C
V
CE(sat)
(V)
200
150
100
50
25°C
-40°C
0.2
25°C
0.1
-40°C
0
1m
10m
100m
1
0.0
1m
10m
100m
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
1.0
1.0
0.8
0.6
125°C
I
C
/I
B
=10
-40°C
25°C
V
CE
=5V
V
CE(sat)
v I
C
-40°C
0.8
V
BE(sat)
(V)
V
BE(on)
(V)
25°C
0.6
125°C
0.4
0.2
1m
0.4
10m
100m
0.2
1m
10m
100m
I
C
Collector Current (A)
I
C
Collector Current (A)
V
BE(sat)
v I
C
I
CBO
Collector Current (nA)
10
V
CB
= 80V
V
BE(on)
v I
C
70
60
f = 1MHz
Capacitance (pF)
1
50
40
30
20
10
0
10m
100m
1
10
Cobo
Cibo
0.1
0.01
25
50
75
100
125
100
T
A
Ambient Temperature (°C)
Voltage(V)
I
CBO
v T
A
Capacitance v Voltage
MMDTA06
Document Number: DS35114 Rev: 2 - 2
5 of 8
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May 2015
© Diodes Incorporated