CMPTA42E NPN
CMPTA92E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA42E and
CMPTA92E are Enhanced versions of the CMPTA42
and CMPTA92 complementary surface mount high
voltage transistors.
MARKING CODES: CMPTA42E: C1DE
CMPTA92E: C2DE
FEATURED ENHANCED SPECIFICATIONS:
♦
BVCBO from 300V min to 350V min.
♦
BVCEO from 300V min to 350V min.
♦
hFE from 25 min to 50 min.
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
350
350
6.0
500
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
♦
Collector-Base Voltage
♦
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Continuous Collector Current
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TYP
SYMBOL
ICBO
IEBO
TEST CONDITIONS
VCB=200V
VEB=3.0V
IC=100µA
IC=1.0mA
IE=100µA
IC=50mA, IB=5.0mA
IC=20mA, IB=2.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0, f=1.0MHz
350
350
6.0
590
475
8.7
125
50
50
50
50
110
110
110
75
500
450
9.6
150
105
105
105
75
6.0
MHz
pF
350
0.9
MIN
CMPTA42E
CMPTA92E
MAX
250
100
UNITS
nA
nA
V
V
V
mV
V
♦
BVCBO
♦
BVCEO
♦
VCE(SAT)
VBE(SAT)
♦
hFE
BVEBO
♦
hFE
♦
hFE
fT
Cob
♦
Enhanced specification
R3 (3-February 2010)