CMPT5551
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5551 type
is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage amplifier
applications.
MARKING CODE: 1FF
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
180
160
6.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
NF
TEST CONDITIONS
VCB=120V
VCB=120V, TA=100°C
IC=100μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V,
VCB=10V,
VCE=10V,
IC=10mA, f=100MHz
IE=0, f=1.0MHz
IC=1.0mA, f=1.0kHz
MIN
MAX
50
50
UNITS
nA
μA
V
V
0.15
0.20
1.00
1.00
80
80
30
100
50
250
300
6.0
200
8.0
MHz
pF
V
V
V
V
V
180
160
6.0
VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
dB
R5 (1-February 2010)
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