CMPT5088
CMPT5089
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5088 and
CMPT5089 are NPN silicon transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for small signal
general purpose and switching applications.
MARKING CODES: CMPT5088: C1Q
CMPT5089: C1R
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
CMPT5088
35
30
4.5
50
350
-65 to +150
357
CMPT5089
30
25
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
CMPT5088
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=20V
-
50
ICBO
IEBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
Cib
hfe
NF
VCB=15V
VEB=3.0V
VEB=4.5V
IC=100μA
IC=1.0mA
IE=100μA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=500μA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100μA, RS=10kΩ,
f=10Hz to 15.7kHz
-
-
-
35
30
4.5
-
-
300
350
300
50
-
-
350
-
-
50
-
-
-
-
0.5
0.8
900
-
-
-
4.0
15
1400
3.0
CMPT5089
MIN
MAX
-
-
-
-
-
30
25
4.5
-
-
400
450
400
50
-
-
450
-
50
-
100
-
-
-
0.5
0.8
1200
-
-
-
4.0
15
1800
2.0
UNITS
nA
nA
nA
nA
V
V
V
V
V
MHz
pF
pF
dB
R7 (9-September 2010)
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