CMPT4209
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT4209 is
a PNP Silicon Transistor designed for high speed
switching applications.
MARKING CODE: 4209
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mW
°C
°C/W
15
15
4.5
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICES
VCE=8.0V
ICES
VCE=8.0V, TA=125°C
BVCBO
IC=100μA
15
BVCES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
IC=100μA
IC=3.0mA
IE=100μA
IC=1.0mA, IB=100μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=1.0mA, IB=100μA
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
0.69
35
50
20
40
850
15
15
4.5
MAX
10
5.0
UNITS
nA
μA
V
V
V
V
0.15
0.18
0.60
0.80
0.86
1.5
120
V
V
V
V
V
V
VCE=0.5V, IC=1.0mA
VCE=0.3V, IC=10mA
VCE=0.3V, IC=10mA, TA=-55°C
VCE=1.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=5.0V, IE=0
VBE=0.5V, IC=0
MHz
7.0
7.0
pF
pF
R0 (1-December 2011)
CMPT4209
SURFACE MOUNT
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
ton
VCC=1.5V, IC=10mA, IB1=1.0mA
20
toff
VCC=1.5V, IC=10mA, IB1=IB2=1.0mA
20
UNITS
ns
ns
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: 4209
R0 (1-December 2011)
w w w. c e n t r a l s e m i . c o m