CMPT3019
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3019 type
is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for very high current, general
purpose amplifier applications.
MARKING CODE: C3A
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ
JA
140
80
7.0
500
1.0
350
-65 to +150
357
UNITS
V
V
V
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=90V
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
NF
VEB=5.0V
IC=100μA
IC=30mA
IE=100μA
IC=150mA,
IC=500mA,
IB=15mA
IB=50mA
50
90
100
50
100
140
80
7.0
MAX
10
10
UNITS
nA
nA
V
V
V
V
V
V
0.2
0.5
1.1
IC=150mA, IB=15mA
VCE=10V, IC=0.1mA
VCE=10V, IC=10mA
VCE=10V,
VCE=10V,
VCE=10V,
IC=150mA
IC=500mA
IC=50mA, f=20MHz
300
400
12
60
4.0
MHz
pF
pF
dB
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=100μA,
RS=1.0kΩ, f=1.0kHz
R4 (9-November 2010)
嵌入式系统
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