CMPT2369
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2369 type is
an NPN silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for small signal general purpose
and high speed switching applications.
MARKING CODE: C1J
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
V
mA
mW
°C
°C/W
40
40
15
4.5
500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=20V
ICBO
VCB=20V, TA=125°C
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
Cob
fT
ts
ton
toff
IC=10µA
IC=10µA
IC=10mA
IE=10µA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=1.0V, IC=10mA
VCE=2.0V, IC=100mA
VCB=5.0V, IE=0, f=1.0MHz
VCE=10V, IC=10mA, f=100MHz
VCC=3.0V, IC=IB1=IB2=10mA
VCC=3.0V, IC=10mA, IB1=3.0mA
VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA
40
40
15
4.5
0.7
40
20
MAX
0.4
30
UNITS
µA
µA
V
V
V
V
0.25
0.85
120
4.0
V
V
500
13
12
18
pF
MHz
ns
ns
ns
R5 (1-February 2010)
模拟电子
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