CMPT2222AE
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2222AE
is an Enhanced version of the CMPT2222A NPN
Switching transistor in a SOT-23 surface mount
package, designed for switching applications, interface
circuit and driver circuit applications.
MARKING CODE: C1PE
FEATURED ENHANCED SPECIFICATIONS:
♦
BV
CBO
from 75V min to 100V min. (145V TYP)
SOT-23 CASE
♦
♦
V
CE
from 1.0V max to 0.5V max. (0.12V TYP)
h
FE
from 40 to 60 min. (130 TYP)
UNITS
V
V
V
mA
mW
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C)
♦
Collector-Base Voltage
♦
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
100
45
6.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=60V
ICBO
VCB=60V, TA=125°C
ICEV
VCE=60V, VEB=3.0V
IEBO
VEB=3.0V
IC=10µA
100
145
♦
BVCBO
IC=10mA
45
53
♦
BVCEO
BVEBO
IE=10μA
6.0
0.92
♦
VCE(SAT) IC=150mA, IB=15mA
0.12
♦
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
0.6
VBE(SAT) IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
100
210
♦
hFE
VCE=10V, IC=1.0mA
100
205
♦
hFE
VCE=10V, IC=10mA
100
205
♦
hFE
VCE=1.0V, IC=150mA
75
150
♦
hFE
hFE
VCE=10V, IC=150mA
100
VCE=10V, IC=500mA
60
130
♦
hFE
fT
VCE=20V, IC=20mA, f=100MHz
300
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
♦
Enhanced specification
MAX
10
10
10
10
0.15
0.50
1.2
2.0
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
300
MHz
pF
pF
8.0
25
R2 (1-February 2010)
CMPT2222AE
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
rb’Cc
VCB=10V, IE=20mA, f=31.8MHz
150
NF
VCE=10V,IC=100μA, RS =1.0KΩ, f=1.0kHz
4.0
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
25
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
UNITS
kΩ
kΩ
X10
-4
X10
-4
μS
μS
ps
dB
ns
ns
ns
ns
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C1PE
R2 (1-February 2010)
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