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CMLT5551HC_15

产品描述SURFACE MOUNT SILICON HIGH CURRENT NPN TRANSISTOR
文件大小433KB,共3页
制造商Central Semiconductor
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CMLT5551HC_15概述

SURFACE MOUNT SILICON HIGH CURRENT NPN TRANSISTOR

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CMLT5551HC
SURFACE MOUNT SILICON
HIGH CURRENT
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5551HC is
a high current NPN silicon transistor, manufactured by
the epitaxial planar process and epoxy molded in an
SOT-563 suface mount package. This device has been
designed for high voltage and high current amplifier
applications.
MARKING CODE: C51
SOT-563 CASE
MAXIMUM RATINGS:
(TA=25 C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
O
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
180
160
6.0
1.0
350
-65 to +150
357
UNITS
V
V
V
A
mW
C
C/W
O
O
ELECTRICAL CHARACTERISTICS:
(TA=25 C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
VCB=120V
VCB=120V, TA=100°C
VEB=4.0V
IC=100μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
80
80
30
10
100
180
160
6.0
O
MAX
50
50
50
UNITS
nA
μA
nA
V
V
V
0.15
0.20
1.00
1.00
250
V
V
V
V
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=1.0A
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
MHz
15
pF
R3 (29-June 2015)

 
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