SOT-23 Plastic-Encapsulate MOSFETS
WILLAS
SE2310
N-Channel MOSFET
DESCRIPTION
The SE2310 uses advanced trench technology to provide excellent
R
DS(ON)
, low gate charge and operation with gate voltage as low as 2.5V.
This device is suitable for use as a battery protection or in other switching
application.
FEATURES
High power and current handing capability
Lead free product is acquired
Surface mount package
APPLICATION
Battery Switch
DC/DC Converter
MARKING: S10
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
STG
Value
60
±20
3
10
0.35
357
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
Moisture Sensitivity Level 1
2013-10
WILLAS ELECTRONIC CORP.
SOT-23 Plastic-Encapsulate MOSFETS
Electrical characteristics (T
a
=25℃ unless otherwise noted)
Parameter
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(note 3)
Drain-source on-resistance
(note 3)
Forward tranconductance
(note 3)
Diode forward voltage
(note 3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3.
Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. Guaranteed by design, not subject to producting.
DYNAMIC CHARACTERISTICS (note 4)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=30V,V
GS
=4.5V,I
D
=3A
V
GS
=10V,V
DD
=30V,
I
D
=1.5A,R
GEN
=1Ω
V
DS
=30V,V
GS
=0V,f =1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
V
SD
V
GS
= 0V, I
D
=250µA
V
DS
=60V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=3A
V
DS
=15V, I
D
=2A
I
S
=3A, V
GS
= 0V
1.4
0.5
60
Symbol
Test Condition
Min
WILLAS
SE2310
Typ
Max
Unit
V
1
±100
2
105
125
1.2
247
34
19.5
6
15
15
10
6
1
1.3
µA
nA
V
mΩ
mΩ
S
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
SWITCHING CHARACTERISTICS (note 4)
2013-10
WILLAS ELECTRONIC CORP.
SOT-23 Plastic-Encapsulate MOSFETS
Ordering Information:
Device PN
Part Number-
T
(1)
G
(2)
‐WS
WILLAS
SE2310
Packing
Tape & Reel Packing :3000pcs/Reel
Note:
1. Packing code, T: Tape & 7” Reel Pakcing
2. RoHS product for packing code suffix ”G”,
Halogen free product for packing code suffix "H"
.
***Disclaimer***
WILLAS reserves the right to make changes without no ce to any product
specifica on herein, to make correc ons, modifica ons, enhancements or other
changes. WILLAS or anyone on its behalf assumes no responsibility or liability
for any errors or inaccuracies. Data sheet specifica ons and its informa on
contained are intended to provide a product descrip on only. "Typical" parameters
which may be included on WILLAS data sheets and/ or specifica ons can
and do vary in different applica ons and actual performance may vary over me.
WILLAS does not assume any liability arising out of the applica on or
use of any product or circuit.
WILLAS products are not designed, intended or authorized for use in medical,
life-saving implant or other applica ons intended for life-sustaining or other related
applica ons where a failure or malfunc on of component or circuitry may directly
or indirectly cause injury or threaten a life without expressed wri en approval
of WILLAS. Customers using or selling WILLAS components for use in
such applica ons do so at their own risk and shall agree to fully indemnify WILLAS
Inc and its subsidiaries harmless against all claims, damages and expenditures
.
2013-10
WILLAS ELECTRONIC CORP.
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