电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RDA1005L

产品描述DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT
文件大小1MB,共10页
制造商RF Micro Devices (Qorvo)
下载文档 全文预览

RDA1005L概述

DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT

文档预览

下载PDF文档
RDA1005LDig-
ital Controlled
Variable Gain
Amplifier
50MHz to
4000MHz, 6
Bit
RDA1005L
DIGITAL CONTROLLED VARIABLE GAIN
AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT
Package: MCM, 32-Pin, 5.2mm x 5.2mm
AMPOUT
DATA
26
GND
GND
GND
GND
32
31
30
29
28
27
AMPIN
CLK
25
LE
1
24
NC
NC
NC
NC
NC
NC
NC
Vdd
Features
AMP
GND
GND
ATTOUT
ACG1
ACG2
ACG3
ACG4
2
6-bit SPI
23
Broadband 50MHz to 4000MHz
Operation
6-Bit Digital Step Attenuator
Serial Mode Programming
Gain = -13.5dB to +18dB (0.5dB
Step Size)
High OIP3/P1dB =
+36dB/20dBm
Single +5V Supply
Small 32-Pin, 5.2mm x 5.2mm,
MCM (Footprint Compatible with
5mm x 5mm 32-Pin QFN)
3
22
4
21
5
DSA
20
6
19
7
18
8
17
9
10
11
12
13
14
15
16
ATTIN
ACG5
ACG6
GND
GND
PUP
E-pad
GND
NC
Functional Block Diagram
Applications
Product Description
RFMD’s RDA1005L is a digitally controlled variable gain amplifier featuring high lin-
earity over the entire gain control range with noise figure less than 6dB in its maxi-
mum gain state. The gain of the 6-bit digital step attenuator is programmed with a
serial mode control interface. The RDA1005L is packaged in a small 5.2mm x
5.2mm leadless laminate MCM which contains plated through thermal vias for
ultra-low thermal resistance. The footprint for this thermal vias for ultra low thermal
resistance. The footprint for this module is directly compatible with a 5mm x 5mm
QFN. This module is easy to use with no external matching components required.
Cellular, 3G Infrastructure
WiBro, WiMax, LTE
Microwave Radio
High Linearity Power Control
Ordering Information
RDA1005LSQ
RDA1005LSR
RDA1005LTR7
RDA1005LTR13
RDA1005LPCK-410
Sample bag with 25 pieces
7” Sample reel with 100 pieces
7” Reel with 750 pieces
13” Reel with 2500 pieces
50MHz to 4000MHz PCBA with 5-piece sample bag
Optimum Technology Matching
®
Applied
DS120828
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
NC
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 10

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 379  1352  2410  1572  1650  8  28  49  32  34 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved