CZDM1003N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZDM1003N is a
3.0 Amp, 100 Volt silicon N-Channel enhancement-
mode MOSFET, designed for motor control and relay
driver applications. This MOSFET offers high current,
low rDS(ON), and low gate charge.
MARKING: FULL PART NUMBER
SOT-223 CASE
APPLICATIONS:
•
Motor control
•
Relay driver
•
DC-DC converters
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
•
Low rDS(ON)
•
High current
•
Low gate charge
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
100
20
3.0
12
2.0
-55 to +150
62.5
UNITS
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I
GSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=100V, VGS=0
BVDSS
VGS(th)
VSD
rDS(ON)
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton
toff
VGS=0, ID=250μA
VGS=VDS, ID=250μA
VGS=0, IS=3.0A
VGS=10V, ID=2.0A
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=80V, VGS=10V, ID=9.2A
VDS=80V, VGS=10V,
VDS=80V, VGS=10V,
ID=9.2A
ID=9.2A
VDD=50V, VGS=10V, ID=9.2A
RG=18Ω
100
2.0
70
55
705
55
15
3.0
5.5
40
60
MAX
100
1.0
4.0
1.3
150
70
975
80
UNITS
nA
μA
V
V
V
mΩ
pF
pF
pF
nC
nC
nC
80
155
ns
ns
R1 (21-January 2013)
CZDM1003N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-223 CASE - MECHANICAL OUTLINE
4
1
2
3
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
4) Drain
MARKING: FULL PART NUMBER
R1 (21-January 2013)
w w w. c e n t r a l s e m i . c o m
FPGA/CPLD
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