MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
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Features
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Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMBTA13 /MMBTA14)
Ideal for Low Power Amplification and Switching
High Current Gain
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
A
C
TOP VIEW
B
E
C
B
E
D
G
H
Mechanical Data
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•
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Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Terminal Connections: See Diagram
MMBTA63 Marking K2E, K3E See Page 3
MMBTA64 Marking K3E See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
K
J
D
L
M
C
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-23
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
0°
8°
α
All Dimensions in mm
B
E
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
(Note 1)
(Note 1)
(Note 1)
I
C
P
D
R
θ
JA
T
J
, T
STG
Value
-30
-30
-10
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CEO
I
CBO
I
EBO
MMBTA63
MMBTA64
MMBTA63
MMBTA64
Min
-30
⎯
⎯
5,000
10,000
10,000
20,000
⎯
⎯
Max
⎯
-100
-100
Unit
V
nA
nA
Test Condition
I
C
= -100μA V
BE
= 0V
V
CB
= -30V, I
E
= 0
V
EB
= -10V, I
C
= 0
I
C
= -10mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -100mA, V
CE
= -5.0V
I
C
= -100mA, V
CE
= -5.0V
I
C
= -100mA, I
B
= -100μA
I
C
= -100mA, V
CE
= -5.0V
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
h
FE
⎯
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
V
CE(SAT)
V
BE(SAT)
-1.5
-2.0
⎯
V
V
f
T
125
MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30055 Rev. 8 - 2
1 of 3
www.diodes.com
MMBTA63 / MMBTA64
© Diodes Incorporated
400
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
P
D
, POWER DISSIPATION (mW)
350
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
1
10,000,000
1,000,000
h
FE
, DC CURRENT GAIN
100,000
10,000
1,000
100
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
1,000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs. Collector Current
1
DS30055 Rev. 8 - 2
2 of 3
www.diodes.com
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
MMBTA63 / MMBTA64
© Diodes Incorporated
Ordering Information
(Note 5)
Device
MMBTA63-7-F
MMBTA64-7-F
Notes:
Packaging
SOT-23
Shipping
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KxE
KxE = Product Type Marking Code, ex: K2E = MMBTA63
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
YM
2003
P
May
5
2004
R
Jun
6
2005
S
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30055 Rev. 8 - 2
3 of 3
www.diodes.com
MMBTA63 / MMBTA64
© Diodes Incorporated
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