电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SZA3044ZPCK-EVB1

产品描述2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
产品类别热门应用    无线/射频/通信   
文件大小479KB,共11页
制造商RF Micro Devices (Qorvo)
下载文档 详细参数 选型对比 全文预览

SZA3044ZPCK-EVB1在线购买

供应商 器件名称 价格 最低购买 库存  
SZA3044ZPCK-EVB1 - - 点击查看 点击购买

SZA3044ZPCK-EVB1概述

2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

2700 MHz - 3800 MHz 射频/微波宽带功率放大器

SZA3044ZPCK-EVB1规格参数

参数名称属性值
最大工作温度85 Cel
最小工作温度-40 Cel
最大输入功率15 dBm
最大工作频率3800 MHz
最小工作频率2700 MHz
加工封装描述4 × 4 MM, 绿色, 塑料, QFN-20
状态ACTIVE
最大电压驻波比10
结构COMPONENT
端子涂层MATTE 锡
阻抗特性50 ohm
微波射频类型WIDE 波段 MEDIUM POWER

文档预览

下载PDF文档
SZA3044Z
2.7GHz to
3.8GHz 5 V
1W
SZA3044Z
2.7GHz to 3.8GHz 5V 1W
POWER AMPLIFIER
Package: QFN, 4mmx4mm
Product Description
RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT
amplifier is made with InGaP on GaAs device technology and fabricated with
MOCVD for an ideal combination of low cost and high reliability. This product is spe-
cifically designed as a final or driver stage for 802.16 equipment in the 3.3GHz to
3.8GHz bands. It can run from a 3V to 6V supply. Optimized on-chip impedance
matching circuitry provides a 50 nominal RF input impedance. The external out-
put match and bias adjustability allows load line optimization for other applications
or over narrower bands. It features an output power detector,
Optimum Technology
on/off power control and high RF overdrive robustness. This
Matching® Applied
product is available in a RoHS Compliant and Green package
GaAs HBT
with matte tin finish, designated by the “Z” package suffix.
GaAs MESFET
Features
P
1dB
=31dBm at 5V
802.11a 54Mb/s 2.5% EVM Per-
formance
P
OUT
=24dBm, VCC=5V, 340mA,
PAE 14.5%
P
OUT
=25dBm, VCC=6V, 365mA,
PAE 14.5%
On-Chip Output Power Detector
Robust - Survives RF Input
Power=+15dBm
On Chip ESD Protection Class 2
(2000V)
Power Up/Down Control <1s
Pin Compatible With SZA-2044
and SZA-5044
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Applications
802.16 WiMAX Driver or Output
Stage
Fixed Wireless, WLL
Parameter
Frequency of Operation
Output Power at 1dB Compression
Small Signal Gain
Output power
Third Order Suppression
Noise Figure
Worst Case Input Return Loss
Worst Case Output Return Loss
Quiescent Current
[1]
Min.
2700
29.5
28.5
22.0
22.0
Specification
Typ.
31.0
30.0
24.0
24.0
24.0
-38.5
5.0
15.0
10.0
205
Max.
3800
Unit
MHz
dBm
dBm
dB
dB
dBm
dBc
dB
dB
dB
mA
mA
uA
°C/W
3.3GHz
Condition
26.0
26.0
-35.5
12.0
7.0
170
240
100.0
Power Up Control Current
2.7
Off V
CC
Leakage Current
10.0
Thermal Resistance
22
Test Conditions: Z
0
=50, V
CC
=5V, I
Q
=205mA, T
BP
=30°C
3.6GHz
3.4GHz
3.6GHz
3.4GHz, 2.5% EVM 802.11a 54Mb/s
3.6GHz, P
OUT
=20dBm per tone
3.6GHz
3.3GHz to 3.8GHz
3.3GHz to 3.6GHz
V
CC
=5V
V
PC
=5V, I
VPC1
+I
VPC2
V
PC
=0V
junction - lead
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS150303
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 11

SZA3044ZPCK-EVB1相似产品对比

SZA3044ZPCK-EVB1 SZA3044Z SZA3044ZSQ SZA3044ZSR
描述 2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
最大工作温度 85 Cel 85 Cel 85 Cel 85 Cel
最小工作温度 -40 Cel -40 Cel -40 Cel -40 Cel
最大输入功率 15 dBm 15 dBm 15 dBm 15 dBm
最大工作频率 3800 MHz 3800 MHz 3800 MHz 3800 MHz
最小工作频率 2700 MHz 2700 MHz 2700 MHz 2700 MHz
加工封装描述 4 × 4 MM, 绿色, 塑料, QFN-20 4 × 4 MM, 绿色, 塑料, QFN-20 4 × 4 MM, 绿色, 塑料, QFN-20 4 × 4 MM, 绿色, 塑料, QFN-20
状态 ACTIVE ACTIVE ACTIVE ACTIVE
最大电压驻波比 10 10 10 10
结构 COMPONENT COMPONENT COMPONENT COMPONENT
端子涂层 MATTE 锡 MATTE 锡 MATTE 锡 MATTE 锡
阻抗特性 50 ohm 50 ohm 50 ohm 50 ohm
微波射频类型 WIDE 波段 MEDIUM POWER WIDE 波段 MEDIUM POWER WIDE 波段 MEDIUM POWER WIDE 波段 MEDIUM POWER
LCD模块的背光电源要求
由于LCD本质上是一种选择性的滤光器,且环境照明产生的显示亮度往往不够,因此,必须在LCD的背面放置光源。放置背面光源的方法有好几种,不同的背面照明光源应用的场合有所不同。 早期的LCD ......
KG5 模拟电子
【国产FPGA高云GW1N-4系列开发板测评】——6、数码管显示时钟(时、分、秒)
本帖最后由 gs001588 于 2021-12-25 22:47 编辑 【国产FPGA高云GW1N-4系列开发板测评】——6、数码管显示时钟(时、分、秒) 从开发板原理图可看出,4位7段数码管为共阳 ......
gs001588 国产芯片交流
坛子里谁在用乐视手机或者一加手机2?
如题,带有type C接口的?:pleased: ...
soso 聊聊、笑笑、闹闹
tps61085升压
肖吉特我用了SS14,R1我用了2个100K的滑变,R2用了18K的电阻, 输入电压设置为6V输出调节滑变使之为9V,Vout接有51Ω的负载,不 断降低输入电压直到3.8V没有9V输出,把输入电压不断上升直到6 ......
赵恒 电源技术
mpu6050静止时角速度输出不是0,大家怎么处理的???
mpu6050静止时角速度输出不是0,大家怎么处理的??, ...
shengchao99205 stm32/stm8
关于LPC1768-SPI
有没有关于LPC1768关于SPI的简单例程...
frankay ARM技术

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 152  1023  2641  1393  1247  17  4  47  11  42 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved