RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic package. These
HBT amplifiers are fabricated using molecular beam epitaxial growth technology
which produces reliable and consistent performance from wafer to wafer and lot to
lot. This product is specifically designed as a driver or final stage amplifier for equip-
ment in the 5.1GHzto5.9GHz band. It can run from a 3Vto5V supply. Load line
optimization for target band is possible outside the package. Its high linearity
makes it an ideal choice for multicarrier and digital applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
Features
Single 3V to 5V Operation
High Linearity Class A
OIP
3
=39dBm at 5V
802.11a 54Mb/s
P
OUT
=17dBm at 3% EVM
P
1dB
24dBm at 5V, 21dBm at
3.3V
Surface Mount Plastic Pack-
age
Power Up/Down Control <1s
OFDM
Multicarrier Applications
802.11a WiFi Driver Stage
Fixed Wireless, UNII
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Applications
Parameter
Frequency of Operation,
Output Power at 1dB Compression
Min.
5100
Specification
Typ.
24.9
24.6
24.0
18.5
17.3
16.4
11.0
17.0
39.0
17.0
Max.
5900
Unit
MHz
dBm
dBm
dBm
dB
dB
dB
dB
dB
dBm
dBm
Condition
5.1GHz
5.5GHz
5.9GHz
5.1GHz
5.5GHz
5.9GHz
5.1GHzto5.9GHz
5.1GHzto5.9GHz
P
OUT
per tone=+8dBm@5.9GHz
802.11a 54Mb/s POUT@3% EVM@5.9GHz,
I=165mA
5.9GHz
I
VBIAS
+I
CTOTAL
=150mA, I
VPC12
=15mA
junction - lead
Small Signal Gain
22.5
17.0
14.9
8.0
12.0
37.0
26.0
20.0
17.9
Worst Case Input Return Loss
Worst Case Output Return Loss
Output IP
3
P
OUT
Noise Figure,
Total Device Current
145.0
7.8
165.0
56
9.8
185.0
dB
mA
°C/W
Thermal Resistance
Test Conditions: Z
0
=50, V
CC
=5V, I=165mA, T
BP
=30°C
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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