SXB2089Z

5MHz to

2500MHz

Medium Power

InGaP/GaAs

HBT Amplifier

SXB2089Z

5MHz to 2500MHz MEDIUM POWER

InGaP/GaAs HBT AMPLIFIER

Package: SOT-89

Product Description

RFMD’s SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunc-

tion Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mount-

able plastic package. These amplifiers are specially designed for use as

driver devices for infrastructure equipment in the 5MHz to 2500MHz Cel-

lular, ISM, WLL, PCS, and W-CDMA applications. It’s high linearity makes it

an ideal choice for multi-carrier as well as digital applications.

Features



High OIP

3

:+43dBm

at

1960MHz

P

1dB

:24dBm

High Linearity/ACP Perfor-

mance

Robust 2000V ESD, Class 2

SOT-89 Package

PA Driver Amplifier

IF Amplifier

Cellular, PCS, ISM, WLL,

W-CDMA



Optimum Technology

Matching® Applied



GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

50

45

40

35

30

25

20

15

10

5

0

Typical IP3, P1dB, Gain

IP3

Applications



P1dB Gain

P1dB

Gain

P1dB

Gain



880 MHz

1960 MHz

2140 MHz

Parameter

Small Signal Gain

Min.

21.5

15.5

Specification

Typ.

25.0

23.0

17.0

1.1

1.4

1.6

1.3

24.0

24.5

40.0

41.0

43.0

4.9

4.5

4.7

4.2

16.0

16.3

15.5

15.6

51.3

135

Max.

24.5

21.5

Unit

dBm

Condition

450MHz

880MHz

1960MHz

2140MHz

450MHz

880MHz

1960MHz

2140MHz

450MHz

880MHz and 1960MHz

2140MHz

450MHz

880MHZ

1960MHz

2140MHz

450MHz

880MHz

1960MHz

2140MHz

450MHz, IS-95, -55dBc ACP

880MHz, IS-95, -55dBc ACP

1960MHz, IS-95, -55dBc ACP

2140MHz, WCDMA, -50dBc ACP

junction - lead

V

S

=8v, R

BIAS

=20, V

DEVICE

=5.2V

Input VSWR

2.5

Output Power at 1dB Compression

23.0

Third Order Intercept Point

38.0

40.0

Noise Figure

6.0

Channel Power IS-95

Thermal Resistance

Device Operating Current

120

150

dBm

dB

dBm

°C/W

mA

Test Conditions: T

A

=25°C, Z

0

=50P

OUT

per tone=+11dBm, ToneSpacing=1MHz

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS110610

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 8

SXB2089Z

Absolute Maximum Ratings

Parameter

Device Current (I

DQ

)

Device Voltage (V

D

)

RF Input Power

Junction Temp (T

J

)

Operating Temp Range (T

L

)

Storage Temp

Operating Dissipated Power (qui-

escent)

ESD Rating - Human Body Model

(HBM)

Moisture Sensitivity Level

Rating

190

6

20

+150

-40 to +85

+150

1.0

Class 2

MSL 2

Unit

mA

V

dBm

°C

W

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free

per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric

materials and red phosphorus as a flame retardant, and <2% antimony in

solder.

Operation of this device beyond any one of these limits may cause permanent

damage. For reliable continuous operation, the device voltage and current

must not exceed the maximum operating values specified in the table on

page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l and T

L

=T

LEAD

250

200

DCIV over Temperature (with App. Circuits)

Id (25C)

Id (mA)

150

Id (-40C)

Id (85C)

100

50

Simplified Device Schematic with ESD diodes

0

2

4

6

8

10

Narrowband

App. Ckt.

Voltage (V)

Vc/Output

Input

Narrowband

App. Ckt.

Noise Figure (with Application Circuits)

6

5

25C

85C

Gnd

NF (dB)

4

3

2

1

0

450 MHz

880 MHz

1960 MHz

2140 MHz

2 of 8

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS110610

SXB2089Z

880 MHz Application Circuit Data, I

D

=135mA, T=+25C, R

Bias

=20 Ohm, V

S

=8V

26

25

P1dB vs. Frequency

-40

-45

-50

ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 880MHz)

25C

-40C

85C

P1dB (dBm)

ACP (dB)

25C

-40C

85C

860

870

880

890

900

910

25

24

23

22

850

-55

-60

-65

-70

-75

10

11

12

Frequency (MHz)

13

14

15

16

17

18

19

Channel Power (dBm)

S21 over Temperature

28

0

Input/Output Return Loss,

Isolation vs. Frequency, T=25C

-5

-10

S11

S12

S22

26

24

22

25C

20

18

850

-40C

85C

Gain (dB)

-15

dB

890

900

910

-20

-25

-30

-35

-40

850

860

870

880

890

900

910

860

870

880

Frequency (MHz)

46

44

42

40

38

36

34

850

OIP3 vs. Freq. (11dBm Output Tones)

46

44

42

40

38

36

34

860

870

880

890

900

910

OIP3 vs. Tone Power @880MHz

OIP3 (dBm)

25C

-40C

85C

OIP3 (dBm)

25C

-40C

85C

2

4

6

8

10

12

14

16

Frequency (MHz)

Pout per tone (dBm)

DS110610

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 8

SXB2089Z

1960 MHz Application Circuit Data, I

D

=135mA, T=+25C, R

Bias

=20 Ohm, V

S

=8V

26

25

P1dB vs. Frequency

-40

-45

-50

ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 1960MHz)

25C

-40C

85C

P1dB (dBm)

ACP (dB)

25C

-40C

85C

25

24

23

22

1930

-55

-60

-65

-70

-75

1940

1950

1960

1970

1980

1990

10

11

12

13

14

15

16

17

18

19

Frequency (MHz)

Channel Power (dBm)

S21 over Temperature

22

0

Input/Output Return Loss,

Isolation vs. Frequency, T=25C

20

18

-5

-10

Gain (dB)

-15

-20

dB

25C

16

14

12

1930

-40C

85C

1940

1950

1960

1970

1980

1990

-25

-30

-35

-40

1930

1940

1950

S11

S12

S22

1960

1970

1980

1990

Frequency (MHz)

OIP3 vs. Tone Power @1960MHz

46

44

42

OIP3 vs. Freq. (11dBm Output Tones)

46

44

OIP3 (dBm)

42

40

38

36

34

1930

25C

-40C

85C

IP3 (dBm)

40

38

36

34

25C

-40C

85C

1940

1950

1960

1970

1980

1990

2

4

6

8

10

12

14

16

Frequency (MHz)

Pout per tone (dBm)

4 of 8

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS110610

SXB2089Z

1

2, 4

3

Function

RF IN

GND

RF OUT/BIAS

Description

RF input pin. This pin requires the use of an external DC blocking capacitor and matching components chosen

for the frequency of operation.

Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as

possible.

RF output pin. This pin requires the use of an external DC blocking capacitor, choke, and matching components

as shown in the Application Schematic.

Suggested Pad Layout

[

]

Package Drawing

DS110610

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 8

参数名称	属性值
状态	ACTIVE
微波射频类型	WIDE BAND MEDIUM POWER

	SXB2089Z-EVB2	SXB2089Z	SXB2089Z-EVB1	SXB2089ZSQ	2SC1922_2014
描述	RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER	RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER	RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER	RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER	Silicon NPN Power Transistors
状态	ACTIVE	ACTIVE	ACTIVE	ACTIVE	-
微波射频类型	WIDE BAND MEDIUM POWER	WIDE BAND MEDIUM POWER	WIDE BAND MEDIUM POWER	WIDE BAND MEDIUM POWER	-

SXB2089Z-EVB2

SXB2089Z-EVB2概述

SXB2089Z-EVB2规格参数

文档预览

SXB2089Z-EVB2相似产品对比

推荐资源