SXA-389(Z)
400MHz to
2500MHz
¼W Medium
Power GaAs
HBT Amplifier
with Active
Bias
SXA-389(Z)
400MHz to 2500MHz ¼W MEDIUM POWER
GaAs HBT AMPLIFIER WITH ACTIVE BIAS
Package: SOT-89
Product Description
RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipo-
lar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent performance
from wafer to wafer and lot to lot. These amplifiers are specially designed
for use as driver devices for infrastructure equipment in the 400MHz
to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
dBm
50
45
40
35
30
25
20
15
10
5
0
850 MHz
1960 MHz
2140 MHz
2450 MHz
OIP3
P1dB
Gain
Features
Available in RFMD Green, RoHS
Compliant, and Pb-Free (Z Part
Number)
On-Chip Active Bias Control, Sin-
gle 5V Supply
High Output 3rd Order
Intercept:+42to+44dBm Typ.
High P
1dB
:+25dBm Typ.
Typical IP3, P1dB, Gain
High Gain:+19dB at 850MHz
High Efficiency: Consumes Only
600mW
Patented High Reliability GaAs
HBT Technology
Surface-Mountable Power Plastic
Package
Applications
W-CDMA, PCS, Cellular Systems
High Linearity IF Amplifiers
Multi-Carrier Applications
Min.
12.5
Parameter
Small Signal Gain
Specification
Typ.
19.0
14.0
13.5
13.0
25.0
25.0
25.0
25.0
43.0
44.0
42.0
42.0
4.7
5.5
6.0
6.0
1.3:1
1.4:1
1.3:1
1.1:1
115.0
575.0
100
Max.
15.0
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
850MHz
1960MHz
2140MHz
2450MHz
850MHz
1960MHz
2140MHz
2450MHz
850MHz
1960MHz
2140MHz
2450MHz
850MHz
1960MHz
2140MHz
2450MHz
850MHz
1960MHz
2140MHz
2450MHz
V
CC
=5V
Condition
Output Power at 1dB Compression
24.0
Output Third Order Intercept Point
39.0
Noise Figure
Input VSWR
Device Operating Current
Operating Dissipated Power
Thermal Resistance
Test Conditions: Z
0
=50Ω, T
A
=25°C
90.0
122.0
610.0
mA
mW
°C/W
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-102231 Rev F
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 10
SXA-389(Z)
Absolute Maximum Ratings
Parameter
Max Device Current (l
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Dissipated Power
Max Junction Temperature (T
J
)
Operating Temperature Range (T
L
)
Max Storage Temperature
ESD
Moisture Sensitivity Level
Rating
240
6
100
1500
165
-40 to + 85
150
1B
MSL 2
Unit
mA
V
mW
mW
°C
°C
°C
Class
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
Recommended Mounting Configuration for
Optimum RF and Thermal Performance
Ground Plane
Plated Thru
Holes
(0.020" DIA)
SXA-389B
Machine
Screws
(Optional)
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-102231 Rev F
SXA-389(Z)
850MHz Application Circuit Data, V
CC
=5V, I
D
=120mA (Tuned for Output IP3)
p
P1dB vs. Frequency
30
28
26
24
22
20
0 .8
0 .8 5
GHz
dB
Gain vs. Frequency
25
-40C
23
21
19
25 C
85 C
-4 0 C
0 .9
0 .9 5
25C
85C
dBm
17
15
0 .8
0.8 5
GHz
0 .9
0.9 5
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
0
-5
-1 0
-1 5
-2 0
-2 5
-3 0
0 .8
0 .8 5
GHz
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
50
47
dBm
-40C
25 C
85 C
44
41
38
35
dB
S11
S12
S22
0 .9
0 .9 5
0 .8
0 .8 5
GHz
0 .9
0 .9 5
50
47
44
dBm
Third Order Intercept vs. Tone Power
Frequency = 850 MHz
Adjacent Channel Power (dBc)
-40
-45
-50
-55
-60
-65
-70
-75
880 MHz Adjacent Channel Power vs.
Channel Output Power
-40C
25C
85C
41
38
35
0
3
6
9
12
15
25C
85C
-4 0C
10
12
14
16
18
20
P
OUT
per tone (dBm)
Channel Output Power (dBm)
IS-95, 9 Channels Forward
EDS-102231 Rev F
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 10
SXA-389(Z)
1960MHz Application Circuit Data, V
CC
=5V, I
D
=120mA (Tuned for Output IP3)
p
P1dB vs. Frequency
30
28
26
24
22
20
1.93
25C
85C
-40C
1.94
1.95
1.96
GHz
dB
Gain vs. Frequency
20
18
16
14
12
10
1.93
25C
85C
-40C
dBm
1.97
1.98
1.99
1.94
1.95
1.96
GHz
1.97
1.98
1.99
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
0
S 11
-5
-1 0
-1 5
-2 0
-2 5
-3 0
1 .9 3
dBm
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
50
S 12
S 22
47
44
41
38
35
1.93
-40C
25C
85C
dB
1 .9 4
1 .9 5
1 .9 6
GHz
1 .9 7
1 .9 8
1 .9 9
1.94
1.95
1.96
GHz
1.97
1.98
1.99
Third Order Intercept vs. Tone Power
Frequency = 1.96 GHz
50
Adjacent Channel Power (dBc)
1960 MHz Adjacent Channel Power vs.
Channel Output Power
-40
-45
-50
-55
-60
-65
-70
-75
25C
85C
-40C
10
12
14
16
18
20
47
44
41
38
35
0
3
6
9
12
15
-4 0C
2 5C
8 5C
dBm
P
OUT
per tone (dBm)
Channel Output Power (dBm)
IS-95, 9 Channels Forward
4 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-102231 Rev F
SXA-389(Z)
2140MHz Application Circuit Data, V
CC
=5V, I
D
=120mA (Tuned for Output IP3)
p
P1dB vs. Frequency
30
28
26
dB
Gain vs. Frequency
20
25C
18
16
14
85C
-40C
dBm
24
22
20
2.11
25C
85C
-40C
2.12
2.13
2.14
GHz
12
10
2.11
2.15
2.16
2.17
2.12
2.13
2.14
GHz
2.15
2.16
2.17
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
0
-5
-10
-15
-20
-25
-30
2.11
S 11
S 12
S 22
dBm
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
50
-40C
47
44
41
38
35
2.11
25C
85C
dB
2.12
2.13
2.14
GHz
2.15
2.16
2.17
2.12
2.13
2.14
GHz
2.15
2.16
2.17
Third Order Intercept vs. Tone Power
Frequency = 2.14 GHz
50
47
44
41
38
35
0
3
6
9
12
15
P
OUT
per tone (dBm)
2140 MHz Adjacent Channel Power vs.
Channel Output Power
-40
Adjacent Channel Power (dBc)
-40C
25C
85C
-45
-50
-55
-60
-65
-70
10
11
12
13
14
15
16
17
Channel Output Power (dBm)
W-CDMA, 64 DPCH + Overhead
dBm
25C
85C
-40C
EDS-102231 Rev F
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 10
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