SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES
Excellent Switching Times
: t
on
=1.1 S(Max.), t
f
=0.7 S(Max.), at I
C
=8A
High Collector Voltage : V
CBO
=700V.
MJE13009
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
(Tc=25
)
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
700
400
9
12
A
24
6
100
150
-55 150
A
W
UNIT
V
V
V
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Emitter Cut-off Current
DC Current Gain
h
FE
(2)
Collector-Emitter
Saturation Voltage
V
CE
=5V, I
C
=8A
I
C
=5A, I
B
=1A
V
CE(sat)
I
C
=8A, I
B
=1.6A
I
C
=12A, I
B
=3A
I
C
=5A, I
B
=1A
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
Note : h
FE
Classification O:14
28
V
BE(sat)
I
C
=8A, I
B
=1.6A
C
ob
f
T
t
on
t
stg
t
f
I
B1
I
B2
I
B1
=I
B2
=1.6A
DUTY CYCLE < 2%
=
I
B2
SYMBOL
I
EBO
h
FE
(1) (Note)
TEST CONDITION
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=5A
MIN.
-
14
6
-
-
-
-
-
-
4
OUTPUT
TYP.
-
-
-
-
-
-
-
-
180
-
-
-
-
MAX.
1
28
-
1
1.5
3
1.5
UNIT
mA
V
V
1.6
-
-
1.1
3
0.7
pF
MHz
S
S
S
V
CB
=10V, f=0.1MHz, I
E
=0
V
CE
=10V, I
C
=0.5A
300µS
15Ω
INPUT
I
B1
-
-
-
V
CC
=125V
2008. 3. 26
Revision No : 1
1/2
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