SPU02N60S5
SPD02N60S5
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
Ultra low effective capacitances
•
Improved transconductance
V
DS
R
DS(on)
I
D
P-TO252.
2
3
1
600
3
1.8
P-TO251.
V
Ω
A
1
2
3
Type
Package
Ordering Code
SPU02N60S5
SPD02N60S5
P-TO251.
P-TO252.
Q67040-S4226
Q67040-S4213
Marking
02N60S5
02N60S5
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Symbol
I
D
Value
1.8
1.1
Unit
A
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 1.35 A,
V
DD
= 50 V
I
D puls
E
AS
3.2
50
0.07
1.8
±20
±
30
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 1.8 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
A
V
W
°C
V
GS
P
tot
T
j ,
T
stg
25
-55... +150
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30
SPU02N60S5
SPD02N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
V
DS
= 480 V,
I
D
= 1.8 A,
T
j
= 125 °C
Symbol
dv/dt
Value
20
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics,
at
Tj=25°C
unless otherwise specified
Parameter
Symbol
Conditions
min.
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
Drain-Source avalanche
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
GS(th)
I
DSS
I
D
=80µΑ,
V
GS
=V
DS
V
DS
=600V,
V
GS
=0V,
T
j
=25°C,
T
j
=150°C
Symbol
min.
R
thJC
R
thJA
Values
typ.
-
-
-
-
-
max.
5
75
75
50
260
-
-
-
-
Unit
K/W
R
thJA
T
sold
-
°C
Values
typ.
-
700
4.5
0.5
-
-
2.7
7.3
max.
-
-
5.5
600
-
3.5
-
-
-
-
-
Unit
V
V
(BR)DS
V
GS
=0V,
I
D
=1.8A
µA
1
50
100
3
-
nA
Ω
Gate-source leakage current
I
GSS
V
GS
=20V,
V
DS
=0V
V
GS
=10V,
I
D
=1.1A,
T
j
=25°C
T
j
=150°C
Drain-source on-state resistance
R
DS(on)
Rev. 2.1
Page 2
2004-03-30
SPU02N60S5
SPD02N60S5
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=350V,
I
D
=1.8A,
V
GS
=0 to 10V
V
DD
=350V,
I
D
=1.8A
Symbol
Conditions
min.
Values
typ.
1.4
240
77
4.4
35
35
35
20
max.
-
-
-
-
-
-
42
30
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=1.1A
-
-
-
-
-
-
-
-
S
pF
V
GS
=0V,
V
DS
=25V,
f=1MHz
V
DD
=350V,
V
GS
=0/10V,
I
D
=1.8A,
R
G
=50
Ω
ns
-
-
-
-
2.3
4.5
7.3
8
-
-
9.5
-
nC
V
(plateau)
V
DD
=350V,
I
D
=1.8A
V
1Repetitve avalanche causes additional power losses that can be calculated as
P
=E
AR
*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.1
Page 3
2004-03-30
SPU02N60S5
SPD02N60S5
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=I
S
V
R
=350V,
I
F
=I
S
,
di
F
/dt=100A/µs
Symbol
I
S
I
SM
Conditions
min.
T
C
=25°C
Values
typ.
-
-
1
860
1.6
max.
1.8
3.2
1.2
1460
-
-
-
-
-
-
Unit
A
V
ns
µC
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
0.1
0.184
0.306
1.207
0.974
0.251
K/W
Thermal capacitance
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
0.00002806
0.0001113
0.0001679
0.000547
0.001388
0.019
Ws/K
T
j
P
tot
(t)
R
th1
R
th,n
T
case
E xternal H eatsink
C
th1
C
th2
C
th,n
T
am b
Rev. 2.1
Page 4
2004-03-30
SPU02N60S5
SPD02N60S5
1 Power dissipation
2 Safe operating area
P
tot
=
f
(
T
C
)
28
SPU02N60S5
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
=25°C
10
1
W
24
22
20
A
P
tot
16
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
10
-1
I
D
18
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
°C
160
10
-2 0
10
10
1
10
2
T
C
10
V
V
DS
3
3 Typ. output characteristic
4 Drain-source on-state resistance
I
D
=
f
(
V
DS
);
T
j
=25°C
parameter:
t
p
= 10 µs,
V
GS
6
20V
R
DS(on)
=
f
(T
j
)
parameter :
I
D
= 1.1 A,
V
GS
= 10 V
17
SPU02N60S5
Ω
14
A
12V
R
DS(on)
12
10
8
6
4
2
0
-60
98%
typ
I
D
4
10V
3
9V
8.5V
8V
2
1
7.5V
7V
6V
0
0
5
10
15
V
V
DS
25
-20
20
60
100
°C
180
T
j
Page 5
Rev. 2.1
2004-03-30
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