NSS40302PDR2G
Complementary 40 V, 6.0 A,
Low V
CE(sat)
Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V
CE(sat)
) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
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40 VOLTS, 6.0 AMPS
COMPLEMENTARY LOW
V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
80 mW
COLLECTOR
7,8
2
BASE
1
EMITTER
4
BASE
3
EMITTER
COLLECTOR
5,6
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
40
−40
40
−40
6.0
−7.0
3.0
−3.0
6.0
−6.0
Unit
Vdc
Vdc
Vdc
A
A
8
1
SOIC−8
CASE 751
STYLE 16
DEVICE MARKING
8
C40302
AYWWG
G
1
C40302 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
HBM Class 3B
MM Class C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NSS40302PDR2G
NSV40302PDR2G
Package
SOIC−8
(Pb−Free)
SOIC−8
(Pb−Free)
Shipping
†
2500 /
Tape & Reel
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
May, 2015 − Rev. 2
Publication Order Number:
NSS40302P/D
NSS40302PDR2G
THERMAL CHARACTERISTICS
Characteristic
SINGLE HEATED
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
DUAL HEATED
(Note 3)
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
P
D
653
5.2
R
qJA
P
D
191
783
6.3
R
qJA
T
J
, T
stg
160
−55 to +150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
P
D
576
4.6
R
qJA
P
D
217
676
5.4
R
qJA
185
mW
mW/°C
°C/W
mW
mW/°C
°C/W
Symbol
Max
Unit
1. FR− 4 @ 10 mm
2
, 1 oz. copper traces, still air.
2. FR− 4 @ 100 mm
2
, 1 oz. copper traces, still air.
3. Dual heated values assume total power is the sum of two equally powered devices.
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2
NSS40302PDR2G
NPN ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 6.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 10 mA, V
CE
= 2.0 V)
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V)
Collector −Emitter Saturation Voltage (Note 5)
(I
C
= 0.1 A, I
B
= 0.010 A)
(I
C
= 1.0 A, I
B
= 0.100 A)
(I
C
= 1.0 A, I
B
= 0.010 A)
(I
C
= 2.0 A, I
B
= 0.200 A)
Base −Emitter Saturation Voltage (Note 5)
(I
C
= 1.0 A, I
B
= 0.01 A)
Base −Emitter Turn−on Voltage (Note 5)
(I
C
= 0.1 A, V
CE
= 2.0 V)
Cutoff Frequency
(I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz)
Input Capacitance (V
EB
= 0.5 V, f = 1.0 MHz)
Output Capacitance (V
CB
= 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
Rise (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
Storage (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
Fall (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
t
d
t
r
t
s
t
f
−
−
−
−
−
−
−
−
100
100
780
110
ns
ns
ns
ns
h
FE
200
200
180
180
V
CE(sat)
−
−
−
−
V
BE(sat)
−
V
BE(on)
−
f
T
100
Cibo
Cobo
−
−
−
320
40
−
450
50
pF
pF
0.650
0.750
MHz
0.780
0.900
V
0.008
0.044
0.080
0.082
0.011
0.060
0.115
0.115
V
400
350
340
320
−
−
−
−
V
V
(BR)CEO
40
V
(BR)CBO
40
V
(BR)EBO
6.0
I
CBO
−
I
EBO
−
−
0.1
−
0.1
mAdc
−
−
mAdc
−
−
Vdc
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
4. Pulsed Condition: Pulse Width = 300
msec,
Duty Cycle
≤
2%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NSS40302PDR2G
PNP ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −0.1 mAdc, I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −0.1 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= −40 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= −6.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= −10 mA, V
CE
= −2.0 V)
(I
C
= −500 mA, V
CE
= −2.0 V)
(I
C
= −1.0 A, V
CE
= −2.0 V)
(I
C
= −2.0 A, V
CE
= −2.0 V)
Collector −Emitter Saturation Voltage (Note 5)
(I
C
= −0.1 A, I
B
= −0.010 A)
(I
C
= −1.0 A, I
B
= −0.100 A)
(I
C
= −1.0 A, I
B
= −0.010 A)
(I
C
= −2.0 A, I
B
= −0.200 A)
Base −Emitter Saturation Voltage (Note 5)
(I
C
= −1.0 A, I
B
= −0.01 A)
Base −Emitter Turn−on Voltage (Note 5)
(I
C
= −0.1 A, V
CE
= −2.0 V)
Cutoff Frequency
(I
C
= −100 mA, V
CE
= −5.0 V, f = 100 MHz)
Input Capacitance (V
EB
= −0.5 V, f = 1.0 MHz)
Output Capacitance (V
CB
= −3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay (V
CC
= −30 V, I
C
= −750 mA, I
B1
= −15 mA)
Rise (V
CC
= −30 V, I
C
= −750 mA, I
B1
= −15 mA)
Storage (V
CC
= −30 V, I
C
= −750 mA, I
B1
= −15 mA)
Fall (V
CC
= −30 V, I
C
= −750 mA, I
B1
= −15 mA)
5. Pulsed Condition: Pulse Width = 300
msec,
Duty Cycle
≤
2%.
t
d
t
r
t
s
t
f
−
−
−
−
−
−
−
−
60
120
400
130
ns
ns
ns
ns
h
FE
250
220
180
150
V
CE(sat)
−
−
−
−
V
BE(sat)
−
V
BE(on)
−
f
T
100
Cibo
Cobo
−
−
−
250
50
−
300
65
pF
pF
−0.660
−0.750
MHz
−0.780
−0.900
V
−0.013
−0.075
−0.130
−0.135
−0.017
−0.095
−0.170
−0.170
V
380
340
300
230
−
−
−
−
V
V
(BR)CEO
−40
V
(BR)CBO
−40
V
(BR)EBO
−7.0
I
CBO
−
I
EBO
−
−
−0.1
−
−0.1
mAdc
−
−
mAdc
−
−
Vdc
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
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NSS40302PDR2G
NPN TYPICAL CHARACTERISTICS
0.16
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.14
0.12
0.10
−55°C
0.08
0.06
0.04
0.02
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
25°C
0.30
I
C
/I
B
= 100
0.25
150°C
0.20
0.15
25°C
0.10
−55°C
0.05
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
700
150°C (5.0 V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
600 150°C (2.0 V)
500
25°C (5.0 V)
400
300
−55°C (5.0 V)
200 −55°C (2.0 V)
100
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
25°C (2.0 V)
0.9
0.8
0.7
0.6
0.5
1.0
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 10
−55°C
25°C
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
V
BE(on)
, BASE−EMITTER TURN−ON
VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
150°C
25°C
V
CE
= +2.0 V
−55°C
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
100 mA
1A
2A
3A
0.0001
0.001
0.01
0.1
I
b
, BASE CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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