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NSS60200L

产品描述60 V, 4.0 A, Low VCE(sat) PNP Transistor
文件大小64KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSS60200L概述

60 V, 4.0 A, Low VCE(sat) PNP Transistor

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NSS60200L
60 V, 4.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
www.onsemi.com
−60 VOLTS, 4.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
80 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
−60
−80
−7.0
−2.0
−4.0
Unit
Vdc
Vdc
Vdc
A
A
1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
Max
460
3.7
R
qJA
(Note 1)
P
D
(Note 2)
270
540
4.3
R
qJA
(Note 2)
T
J
, T
stg
230
−55 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
NSV60200LT1G
VG MG
G
VG = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
NSS60200LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm
2
, 1 oz. copper traces.
2. FR− 4 @ 500 mm
2
, 1 oz. copper traces.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60200L/D
©
Semiconductor Components Industries, LLC, 2015
1
August, 2015 − Rev. 2

NSS60200L相似产品对比

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描述 60 V, 4.0 A, Low VCE(sat) PNP Transistor 60 V, 4.0 A, Low VCE(sat) PNP Transistor

 
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