NCV4274C
Regulator, 400 mA,
Low Dropout Voltage
Description
The NCV4274C is a precision micro−power voltage regulator with
an output current capability of 400 mA available in the DPAK,
D2PAK and SOT−223 packages.
The output voltage is accurate within
±2.0%
with a maximum
dropout voltage of 0.5 V with an input up to 40 V. Low quiescent
current is a feature drawing only 125
mA
with a 1 mA load. This part is
ideal for automotive and all battery operated microprocessor
equipment.
The regulator is protected against reverse battery, short circuit, and
thermal overload conditions. The device can withstand load dump
transients making it suitable for use in automotive environments.
Features
www.onsemi.com
MARKING DIAGRAMS
4
74C−xxG
ALYWW
x
1
2
3
1
Input
2, 4 Ground
3
Output
DPAK
DT SUFFIX
CASE 369C
•
•
•
•
•
3.3 V, 5.0 V,
±2.0%
Output Options
Low 125
mA
Quiescent Current at 1 mA load current
400 mA Output Current Capability
Fault Protection
+60 V Peak Transient Voltage with Respect to GND
S
−42
V Reverse Voltage
S
Short Circuit
S
Thermal Overload
•
Very Low Dropout Voltage
•
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These are Pb−Free Devices
D2PAK
DS SUFFIX
CASE 418AF
NC
V4274C−xx
AWLYYWWG
1
Input
2, 4 Ground
3
Output
SOT−223
ST SUFFIX
CASE 318E
xx
AYW
74CxxG
G
1
= 33 (3.3 V)
= 50 (5.0 V)
A
= Assembly Location
L, WL = Wafer Lot
Y, YY
= Year
W, WW = Work Week
G or
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 12 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2016
November, 2018
−
Rev. 4
1
Publication Order Number:
NCV4274C/D
NCV4274C
I
Q
Bandgap
Refernece
−
+
Current Limit and
Saturation Sense
Thermal
Shutdown
GND
Figure 1. Block Diagram
Pin Definitions and Functions
Pin No.
1
2,4
3
Symbol
I
GND
Q
Function
Input; Bypass directly at the IC with a ceramic capacitor to GND.
Ground
Output; Bypass with a capacitor to GND.
ABSOLUTE MAXIMUM RATINGS
Pin Symbol, Parameter
I,
Input−to−Regulator
Voltage
Current
I,
Input peak Transient Voltage to Regulator with Respect
to GND (Note 1)
Q,
Regulated Output
Voltage
Current
GND,
Ground Current
Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
ESD Capability, Charged Device Model (Note 2)
Symbol
V
I
I
I
V
I
V
Q
I
Q
I
GND
T
J
T
Stg
ESD
HB
ESD
MM
ESD
CDM
V
Q
=
V
I
−1.0
Internally
Limited
−
−40
−50
4
200
1
Condition
Min
−42
Internally
Limited
Max
45
Internally
Limited
60
40
Internally
Limited
100
150
150
mA
°C
°C
kV
V
kV
V
V
Unit
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Load Dump Test B (with centralized load dump suppression) according to ISO16750-2 standard. Guaranteed by design. Not tested in
production. Passed Class C.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD MM tested per AEC−Q100−003 (EIA/JESD22−A115)
Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes <50mm
2
due to the
inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform characteristic
defined in JEDEC JS−002−2014.
www.onsemi.com
2
NCV4274C
OPERATING RANGE
Parameter
Input Voltage (5.0 V Version)
Input Voltage (3.3 V Version)
Junction Temperature
Symbol
V
I
V
I
T
J
Condition
Min
5.5
4.5
−40
Max
40
40
150
Unit
V
V
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
THERMAL RESISTANCE
Parameter
Junction−to−Ambient
Junction−to−Ambient
Junction−to−Case
Junction−to−Case
Junction−to−Tab
Junction−to−Ambient
DPAK
D2PAK
DPAK
D2PAK
SOT−223
SOT−223
Symbol
R
thja
R
thja
R
thjc
R
thjc
Y
-JLX
,
YLX
Condition
Min
−
−
−
−
−
−
Max
72.5
(Note 3)
56.7
(Note 3)
5.8
5.8
15.6
(Note 3)
87
(Note 3)
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
R
qJA
,
q
JA
3. 1 oz copper, 300 mm
2
copper area, single−sided FR4 PCB.
MOISTURE SENSITIVITY LEVEL
(Note 4)
Parameter
Moisture Sensitivity Level
Symbol
MSL
Condition
DPAK and D2PAK
SOT−223
Min
1
3
Max
−
−
Unit
4. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
3
NCV4274C
ELECTRICAL CHARACTERISTICS
−40°C
< T
J
< 150°C; V
I
= 13.5 V unless otherwise noted.
Parameter
REGULATOR
Output Voltage (5.0 V Version)
Output Voltage (5.0 V Version)
Output Voltage (3.3 V Version)
Output Voltage (3.3 V Version)
Current Limit (All Versions)
Quiescent Current
V
Q
V
Q
V
Q
V
Q
I
Q
I
q
5 mA < I
Q
< 400 mA
6 V < V
I
< 28 V
5 mA < I
Q
< 200 mA
6 V < V
I
< 40 V
5 mA < I
Q
< 400 mA
4.5 V < V
I
< 28 V
5 mA < I
Q
< 200 mA
4.5 V < V
I
< 40 V
V
Q
= 90% V
QTYP
I
Q
= 1 mA
V
Q
= 5.0 V
V
Q
= 3.3 V
I
Q
= 250 mA
V
Q
= 5.0 V
V
Q
= 3.3 V
I
Q
= 400 mA
V
Q
= 5.0 V
V
Q
= 3.3 V
I
Q
= 250 mA,
V
DR
= V
I
−
V
Q
V
I
= 5.0 V
I
Q
= 5 mA to 400 mA
DV
I
= 12 V to 32 V
I
Q
= 5 mA
ƒr = 100 Hz,
V
r
= 0.5 V
PP
I
Q
= 5 mA
4.9
4.9
3.23
3.23
400
−
−
−
−
−
−
5.0
5.0
3.3
3.3
600
125
125
5
5
10
10
5.1
5.1
3.37
3.37
−
250
250
15
15
35
35
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Dropout Voltage
5.0 V Version
Load Regulation (3.3 V and 5 V Versions)
Line Regulation (3.3 V and 5 V Versions)
Power Supply Ripple Rejection
Thermal Shutdown Temperature*
V
DR
−
−
−
−
150
250
3
4
60
−
500
20
25
−
210
mV
mV
mV
dB
°C
DV
Q
DV
Q
PSRR
T
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Guaranteed by design, not tested in production
V
I
V
I
I
I
C
11
1.0
mF
I
C
12
100 nF
1 NCV4274C 3
2,4
GND
I
GND
Q
I
Q
C
Q
10
mF
or
22
mF
V
Q
V
Q
R
load
V
I
Input
C
I
100 nF
1 NCV4274C 3
2,4
GND
V
Q
C
Q
*
Output
*C
Q
= 10
mF
for V
Q
≤
3.3 V
C
Q
= 22
mF
for V
Q
≥
5 V
Figure 2. Measuring Circuit
Figure 3. Application Circuit
www.onsemi.com
4
NCV4274C
TYPICAL CHARACTERISTIC CURVES
−
5 V VERSION
100
V
Q
, OUTPUT VOLTAGE (V)
5.1
10
ESR
(W)
Unstable Region
5.05
1
Stable Region
5
0.1
C
Q
= 22
mF
0.01
0
100
200
300
400
4.95
V
I
= 13.5 V
R
L
= 1 kW
0
40
80
120
160
4.9
−40
I
Q
, OUTPUT CURRENT (mA)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 4. Output Stability with Output
Capacitor ESR
6
V
DR
, DROPOUT VOLTAGE (mV)
V
Q
, OUTPUT VOLTAGE (V)
5
4
3
2
1
0
T
J
= 25°C
R
L
= 20
W
0
2
4
6
8
10
400
350
300
250
200
150
100
50
0
0
50
Figure 5. Output Voltage vs.
Junction Temperature
T
J
= 125°C
T
J
= 25°C
100
150
100
250
300
350
400
V
I
, INPUT VOLTAGE (V)
I
Q
, OUTPUT CURRENT (mA)
Figure 6. Output Voltage vs. Input Voltage
Figure 7. Dropout Voltage vs. Output Current
1.6
I
Q
, OUTPUT CURRENT (mA)
I
I
, INPUT CURRENT (mA)
1.2
0.8
0.4
0
−0.4
−0.8
−1.2
−50
−30
−10
10
R
L
= 6.8 kW
T
J
= 25°C
30
50
700
600
500
400
300
200
100
0
0
5
10
15
20
25
30
T
J
= 25°C
V
Q
= 0 V
35
40
45
V
I
, INPUT VOLTAGE (V)
V
I
, INPUT VOLTAGE (V)
Figure 8. Input Current vs. Input Voltage
Figure 9. Maximum Output Current vs. Input
Voltage
www.onsemi.com
5