NCP703
300 mA, Ultra-Low Quiescent
Current, I
Q
12
mA,
Ultra-Low
Noise, LDO Voltage Regulator
Noise sensitive RF applications such as Power Amplifiers in
satellite radios, infotainment equipment, and precision
instrumentation require very clean power supplies. The NCP703 is
300 mA LDO that provides the engineer with a very stable, accurate
voltage with ultra low noise and very high Power Supply Rejection
Ratio (PSRR) suitable for RF applications. The device doesn’t require
any additional noise bypass capacitor to achieve ultra−low noise
performance. In order to optimize performance for battery operated
portable applications, the NCP703 employs dynamic Iq management
for ultra−low quiescent current consumption at light−load conditions
and great dynamic performance.
Features
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5
1
TSOP−5
SN SUFFIX
CASE 483
1
XDFN6
MX SUFFIX
CASE 711AE
MARKING DIAGRAMS
5
1
XXXAYW
G
1
X, XXX = Specific Device Code
M = Date Code
A
= Assembly Location
Y
= Year
W = Work Week
G
= Pb−Free Package
XM
G
•
Operating Input Voltage Range: 2.0 V to 5.5 V
•
Available in Fixed Voltage Options: 0.8 to 3.5 V
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Contact Factory for Other Voltage Options
Ultra−Low Quiescent Current of Typ. 12
mA
Ultra−Low Noise: 13
mV
RMS
from 100 Hz to 100 kHz
Very Low Dropout: 180 mV Typical at 300 mA
±2%
Accuracy Over Load/Line/Temperature
High PSRR: 68 dB at 1 kHz
Internal Soft−Start to Limit the Turn−On Inrush Current
Thermal Shutdown and Current Limit Protections
Stable with a 1
mF
Ceramic Output Capacitor
Available in TSOP−5 and XDFN 1.5 x 1.5 mm Package
Active Output Discharge for Fast Turn−Off
These are Pb−Free Devices
PIN CONNECTIONS
1
IN
GND
EN
N/C
5−Pin TSOP−5
(Top View)
1
OUT
N/C
GND
IN
N/C
EN
OUT
Typical Applicaitons
PDAs, Mobile Phones, GPS, Smartphones
Wireless Handsets, Wireless LAN, Bluetooth, Zigbee
Portable Medical Equipment
Other Battery Powered Applications
V
IN
IN
C
IN
1
mF
ON
OFF
EN
NCP703
GND
C
OUT
OUT
1
mF
Ceramic
V
OUT
6−Pin XDFN 1.5 x 1.5 mm
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 16 of this data sheet.
Figure 1. Typical Application Schematic
©
Semiconductor Components Industries, LLC, 2016
1
May, 2016 − Rev. 3
Publication Order Number:
NCP703/D
NCP703
IN
EN
BANDGAP
REFERENCE
ENABLE
LOGIC
UVLO
THERMAL
SHUTDOWN
MOSFET
DRIVER WITH
CURRENT LIMIT
INTEGRATED
SOFT−START
AUTO LOW
POWER MODE
OUT
ACTIVE
DISCHARGE
EN
GND
Figure 2. Simplified Schematic Block Diagram
Table 1. PIN FUNCTION DESCRIPTION
Pin No.
XDFN6
1
2
3
4
5
6
1
Pin No.
TSOP−5
5
4
2
3
Pin
Name
OUT
N/C
GND
EN
N/C
IN
Description
Regulated output voltage pin. A small 1
mF
ceramic capacitor is needed from this pin to ground
to assure stability.
Not connected.
Power supply ground. Connected to the die through the lead frame. Soldered to the copper
plane allows for effective heat dissipation.
Enable pin. Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regu-
lator into shutdown mode.
Not connected. This pin can be tied to ground to improve thermal dissipation.
Input pin. A small capacitor is needed from this pin to ground to assure stability.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (Note 1)
Output Voltage
Enable Input
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
Symbol
V
IN
V
OUT
V
EN
t
SC
T
J(MAX)
T
STG
ESD
HBM
ESD
MM
Value
−0.3 V to 6 V
−0.3 V to V
IN
+ 0.3 V
−0.3 V to V
IN
+ 0.3 V
Indefinite
150
−55 to 150
2000
200
Unit
V
V
V
s
°C
°C
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
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NCP703
Table 3. THERMAL CHARACTERISTICS
(Note 3)
Rating
Thermal Characteristics, TSOP−5,
Thermal Resistance, Junction−to−Air
Thermal Characterization Parameter, Junction−to−Lead (Pin 2)
Thermal Characteristics, XDFN6 1.5 x 1.5 mm
Thermal Resistance, Junction−to−Air
Thermal Characterization Parameter, Junction−to−Board
3. Single component mounted on 1 oz, FR4 PCB with 645 mm
2
Cu area.
Symbol
q
JA
y
JL
q
JA
y
JB
Value
241
129
°C/W
146
77
Unit
°C/W
Table 4. ELECTRICAL CHARACTERISTICS
−40°C
≤
T
J
≤
125°C; V
IN
= V
OUT(NOM)
+ 0.5 V or 2.0 V, whichever is greater; V
EN
= 0.9 V, I
OUT
= 10 mA, C
IN
= C
OUT
= 1
mF
unless
otherwise noted. Typical values are at T
J
= +25°C. (Note 4)
Parameter
Operating Input Voltage
Undervoltage Lock−out
Output Voltage Accuracy
Line Regulation
V
IN
rising
V
OUT
+ 0.5 V
≤
V
IN
≤
5.5 V, I
OUT
= 0 − 300 mA
V
OUT
+ 0.5 V
≤
V
IN
≤
4.5 V, I
OUT
= 10 mA
V
OUT
+ 0.5 V
≤
V
IN
≤
5.5 V, I
OUT
= 10 mA
Load Regulation
Load Transient
Dropout Voltage (Note 5)
Output Current Limit
Quiescent Current
Ground Current
Shutdown Current
I
OUT
= 0 mA to 300 mA
I
OUT
= 1 mA to 300 mA or 300 mA to 1 mA in
1
ms,
C
OUT
= 1
mF
I
OUT
= 300 mA, V
OUT(nom)
= 2.5 V
V
OUT
= 90% V
OUT(nom)
I
OUT
= 0 mA
I
OUT
= 300 mA
V
EN
≤
0.4 V, T
J
= +25°C
V
EN
≤
0 V, V
IN
= 2.0 to 4.5 V, T
J
= −40 to +85°C
EN Pin Threshold Voltage
High Threshold
Low Threshold
EN Pin Input Current
Turn−On Time
Power Supply Rejection Ratio
V
EN
Voltage increasing
V
EN
Voltage decreasing
V
EN
= 5.5 V
C
OUT
= 1.0
mF,
from assertion EN pin to 98%
V
OUT(nom)
V
IN
= 3 V, V
OUT
= 2.5 V
I
OUT
= 300 mA
f = 100 Hz
f = 1 kHz
f = 10 kHz
Test Conditions
Symbol
V
IN
UVLO
V
OUT
Reg
LINE
Reg
LINE
Reg
LOAD
Tran
LOAD
V
DO
I
CL
I
Q
I
GND
I
DIS
I
DIS
V
EN_HI
V
EN_LO
I
EN
t
ON
PSRR
0.9
0.4
100
200
70
68
53
13
160
−
20
−
500
nA
ms
dB
310
Min
2.0
1.2
−2
450
600
20
−100/
+150
180
450
12
200
0.12
0.55
2
300
750
20
1.6
Typ
Max
5.5
1.9
+2
Unit
V
V
%
mV/V
mV/V
mV/mA
mV
mV
mA
mA
mA
mA
mA
V
Output Noise Voltage
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
V
OUT
= 2.5 V, V
IN
= 3 V, I
OUT
= 300 mA
f = 100 Hz to 100 kHz
Temperature increasing from T
J
= +25°C
Temperature falling from T
SD
V
N
T
SD
T
SDH
mV
rms
°C
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T
J
= T
A
= 25_C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when V
OUT
falls 100 mV below the regulated voltage at V
IN
= V
OUT(NOM)
+ 0.5 V.
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NCP703
TYPICAL CHARACTERISTICS
10
OUTPUT VOLTAGE NOISE (mV/rtHz)
1
RMS Output Noise (mV)
I
OUT
= 10 mA
0.1
V
IN
= 2.0 V
V
OUT
= 0.8 V
C
IN
= C
OUT
= 1
mF
MLCC, X7R,
1206 size
0.01
0.1
1
I
OUT
1 mA
10 mA
0.01
I
OUT
= 1 mA
I
OUT
= 300 mA
10
100
1000
300 mA
10 Hz − 100 kHz
18.45
17.18
14.14
100 Hz − 100 kHz
17.77
16.43
13.11
0.001
FREQUENCY (kHz)
Figure 3. Output Voltage Noise Spectral Density for V
OUT
= 0.8 V, C
OUT
= 1
mF
10
OUTPUT VOLTAGE NOISE (mV/rtHz)
1
RMS Output Noise (mV)
I
OUT
0.1
V
IN
= 2.0 V
V
OUT
= 0.8 V
C
IN
= 1
mF
C
OUT
= 4.7
mF
MLCC, X7R,
1206 size
0.01
0.1
1
I
OUT
= 10 mA
I
OUT
= 300 mA
1 mA
10 mA
300 mA
10 Hz − 100 kHz
14.07
16.59
15.46
100 Hz − 100 kHz
13.14
15.83
14.53
0.01
I
OUT
= 1 mA
10
100
1000
0.001
FREQUENCY (kHz)
Figure 4. Output Voltage Noise Spectral Density for V
OUT
= 0.8 V, C
OUT
= 4.7
mF
10
OUTPUT VOLTAGE NOISE (mV/rtHz)
1
RMS Output Noise (mV)
I
OUT
= 10 mA
0.1
V
IN
= 3.8 V
V
OUT
= 3.3 V
C
IN
= C
OUT
= 1
mF
MLCC, X7R,
1206 size
0.01
0.1
1
I
OUT
1 mA
10 mA
300 mA
I
OUT
= 1 mA
I
OUT
= 300 mA
10
100
1000
0.01
10 Hz − 100 kHz
20.29
19.76
18.74
100 Hz − 100 kHz
17.06
16.11
15.46
0.001
FREQUENCY (kHz)
Figure 5. Output Voltage Noise Spectral Density for V
OUT
= 3.3 V, C
OUT
= 1
mF
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NCP703
TYPICAL CHARACTERISTICS
10
OUTPUT VOLTAGE NOISE (mV/rtHz)
1
RMS Output Noise (mV)
I
OUT
= 300 mA
0.1
V
IN
= 3.8 V
V
OUT
= 3.3 V
C
IN
= 1
mF
C
OUT
= 4.7
mF
MLCC, X7R,
1206 size
0.01
0.1
1
I
OUT
1 mA
10 mA
300 mA
I
OUT
= 10 mA
I
OUT
= 1 mA
10
100
1000
10 Hz − 100 kHz
17.64
19.54
21.50
100 Hz − 100 kHz
13.52
15.96
18.71
0.01
0.001
FREQUENCY (kHz)
Figure 6. Output Voltage Noise Spectral Density for V
OUT
= 3.3 V, C
OUT
= 4.7
mF
350
I
GND
, GROUND CURRENT (mA)
I
GND
, GROUND CURRENT (mA)
315
280
245
210
175
140
105
70
35
0
0
50
100
150
V
IN
= V
OUT
+ 0.5 V
C
IN
= 1
mF
C
OUT
= 1
mF
MLCC, X7R,
1206 size
200
250
300
V
OUT
= 3.3 V
V
OUT
= 2.5 V
V
OUT
= 0.8 V
160
140
V
OUT
= 3.3 V
120
100
V
OUT
= 0.8 V
80
60
40
20
0
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75 2.00
I
OUT
, OUTPUT CURRENT (mA)
I
OUT
, OUTPUT CURRENT (mA)
V
IN
= V
OUT
+ 0.5 V
C
IN
= 1
mF
C
OUT
= 1
mF
MLCC, X7R,
1206 size
V
OUT
= 2.5 V
Figure 7. Ground Current vs. Output Current
270
I
GND
, GROUND CURRENT (mA)
I
GND
, GROUND CURRENT (mA)
240
210
180
150
120
90
60
30
0
0
30
60
90
120 150 180
210 240 270 300
I
OUT
, OUTPUT CURRENT (mA)
V
IN
= V
OUT
+ 0.5 V
C
IN
= 1
mF
C
OUT
= 1
mF
MLCC, X7R,
1206 size
T
J
= −40°C
T
J
= 25°C
T
J
= 125°C
160
140
120
100
80
60
40
20
0
0
Figure 8. Ground Current vs. Output Current
from 0 mA to 2 mA
T
J
= 25°C
T
J
= −40°C
T
J
= 125°C
V
IN
= V
OUT
+ 0.5 V
C
IN
= 1
mF
C
OUT
= 1
mF
MLCC, X7R,
1206 size
0.25
0.50
0.75
1.00
1.25
1.50
1.75 2.00
I
OUT
, OUTPUT CURRENT (mA)
Figure 9. Ground Current vs. Output Current
at Temperatures
Figure 10. Ground Current vs. Output Current
0 mA to 2 mA at Temperatures
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