MGA-82563
0.1– 6 GHz 3 V, 17 dBm Amplifier
Data Sheet
Description
Avago’s MGA-82563 is an economical, easy-to-use GaAs
MMIC amplifier that offers excellent power and low noise
figure for applications from 0.1 to 6 GHz. Packaged in an
ultra-miniature SOT-363 package, it requires half the
board space of a SOT-143 package.
The input and output of the amplifier are matched to
50: (below 2:1 VSWR) across the entire bandwidth,
eliminating the expense of external matching. The am-
plifier allows a wide dynamic range by offering a 2.2 dB
NF coupled with a +31 dBm Output IP
3
.
The circuit uses state-of-the-art PHEMT technology
with proven reliability. On-chip bias circuitry allows op-
eration from a single +3 V power supply, while resistive
feedback ensures stability (K>1) over all frequencies and
temperatures.
Features
x
Lead-free Option Available
x
+17.3 dBm P
1 dB
at 2.0 GHz
+20 dBm P
sat
at 2.0 GHz
x
Single +3V Supply
x
2.2 dB Noise Figure at 2.0 GHz
x
13.2 dB Gain at 2.0 GHz
x
Ultra-miniature Package
x
Unconditionally Stable
Applications
x
Buffer or Driver Amp for PCS,
PHS, ISM, SATCOM and WLL Applications
x
High Dynamic Range LNA
Surface Mount Package
SOT-363 (SC-70)
Simplified Schematic
OUTPUT
and V
d
6
INPUT
3
Pin Connections and Package Marking
BIAS
BIAS
GND 1
GND 2
INPUT 3
6 OUTPUT
and V
d
5 GND
4 GND
GND
1, 2, 4, 5
82x
Note:
Package marking provides orientation and identification.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
"82" = Device Code
"x" = Date code character identifies month of manufacture
MGA-82563 Absolute Maximum Ratings
Symbol
V
d
V
gd
V
in
P
in
T
ch
T
STG
Parameter
Device Voltage, RF Output
to Ground
Device Voltage, Gate
to Drain
Range of RF Input Voltage
to Ground
CW RF Input Power
Channel Temperature
Storage Temperature
Units
V
V
V
dBm
°C
°C
Absolute
Maximum
[1]
5.0
Notes:
-6.0
+0.5 to -1.0
+13
165
-65 to 150
Thermal Resistance
[2]
:
T
ch-c
= 180°C/W
1. Permanent damage may occur if any
of these limits are exceeded.
2. T
C
= 25°C (T
C
is defined to be the tem-
perature at the top of the package.)
MGA-82563 Electrical Specifications,
T
C
= 25°C, Z
O
= 50 Ω, V
d
= 3 V
Symbol
G
test
NF
test
NF
50
Parameters and Test Conditions
Gain in test circuit
[1]
Noise Figure in test circuit
[1]
Noise Figure in 50 Ω system
f = 2.0 GHz
f = 2.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 0.2–5.0 GHz
f = 0.2–5.0 GHz
Units
Min.
12.0
Typ.
13.2
2.2
2.3
2.2
2.2
2.2
2.4
2.7
14.7
14.5
13.5
12.1
10.7
8.8
17.4
17.5
17.3
17.1
17.0
16.8
+31
1.8:1
1.2:1
Max.
15
2.9
Std Dev
[2]
0.35
0.20
dB
0.20
|S
21
|
2
Gain in 50 Ω system
dB
0.35
P
1 dB
Output Power at 1 dB Gain Compression
dBm
0.54
IP
3
VSWR
in
VSWR
out
I
d
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
dBm
1.0
mA
63
84
101
Notes:
1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial character-
ization of this product, and is intended to be used as an estimate for distribution of the typical specification.
2
MGA-82563 Applications Information
Introduction
This medium power GaAs MMIC amplifier was developed
for commercial wireless applications from 100 MHz to 6
GHz. The MGA-82563 runs on only 3 volts and typically
requires only 84 mA to deliver over 17 dBm of output
power at 1 dB gain compression.
The 17.3 dBm output power (P
1 dB
) makes the MGA-
82563 extremely useful for pre-driver and driver stages
in transmit cascades or for final output stages in lower
power systems. For transmitter gain stage applications
that require even higher output power, the MGA-82563
can provide 100 mW (20 dBm) of saturated output pow-
er with a power added efficiency approaching 50%. The
low cost of the MGA-82563 makes it feasible to power
combine two (or more) devices for even higher output
power amplifiers.
The MGA-82563 offers an excellent combination of high
linearity (+31 dBm output IP
3
) and very low noise figure
(2.2 dB) for applications requiring a very high dynamic
range.
The MGA-82563 uses resistive feedback to simultane-
ously achieve flat gain over a wide bandwidth and to
match the input and output impedances to 50Ω. The
MGA-82563 is also unconditionally stable (K>1) over its
entire frequency range, making it both very easy to use
and yielding consistent performance in the manufacture
of high volume wireless products.
An innovative internal bias circuit regulates the device’s
internal current to enable the MGA-82563 to operate
over a wide temperature range with a single, positive
power supply of 3 volts. The MGA-82563 will operate
with reduced power and gain with a bias supply as low
as 1.5 volts.
Phase Reference Planes
The positions of the reference planes used to specify the
S-Parameters and Noise Parameters for this device are
shown in Figure 11. As seen in the illustration, the refer-
ence planes are located at the point where the package
leads contact the test circuit.
REFERENCE
PLANES
TEST CIRCUIT
Figure 11. Phase Reference Planes.
Specifications and Statistical Parameters
Several categories of parameters appear within this data
sheet. Parameters may be described with values that are
either “minimum or maximum,”“typical,” or “standard de-
viations.”
The values for parameters are based on comprehensive
product characterization data, in which automated mea-
surements are made on of a minimum of 500 parts taken
from 3 non-consecutive process lots of semiconductor
wafers. The data derived from product characterization
tends to be normally distributed, e.g., fits the standard
“bell curve.”
Parameters considered to be the most important to
system performance are bounded by
minimum
or
maxi-
mum
values. For the MGA-82563, these parameters are:
Gain (G
test
), Noise Figure (NF
test
), and Device Current (I
d
).
Each of these guaranteed parameters is 100% tested.
Values for most of the parameters in the table of Electri-
cal Specifications that are described by
typical
data are
the mathematical mean (P), of the normal distribution
taken from the characterization data. For parameters
where measurements or mathematical averaging may
not be practical, such as the Noise and S-parameter ta-
bles or performance curves, the data represents a nomi-
nal part taken from the “center” of the characterization
distribution. Typical values are intended to be used as a
basis for electrical design.
To assist designers in optimizing not only the immediate
circuit using the MGA-82563, but to also optimize and
evaluate trade-offs that affect a complete wireless sys-
tem, the
standard deviation
(V) is provided for many of
the Electrical Specifications parameters (at 25°) in addi-
tion to the mean. The standard deviation is a measure of
the variability about the mean. It will be recalled that a
normal distribution is completely described by the mean
and standard deviation.
Test Circuit
The circuit shown in Figure 10 is used for 100% RF testing
of Gain and Noise Figure. The test circuit is merely a 50Ω in-
put/output PC board with a RFC at the output to apply DC
bias to the device under test. Tests in this circuit are used to
guarantee the NF
test
and G
test
parameters shown in the table
of Electrical Specifications.
100 pF
RF
INPUT
RF
OUTPUT
22 nH
RFC
V
d
100 pF
Figure 10. Test Circuit.
82
5