MGA-31716
0.1 W High Linearity Driver Amplifier
Data Sheet
Description
Avago Technologies MGA-31716 is a high linearity driver
MMIC Amplifier housed in a standard QFN 3X3 16 lead
plastic package. It features high gain, low operating
current, low noise figure with good input and output
return loss. Power consumption can be further reduced
by reducing the quiescent bias current using two external
bias resistors. The device can be easily matched at different
frequencies to obtain optimal linearity performance at
those frequencies.
MGA-31716 is especially ideal for 50
W
wireless infrastruc-
ture application operating from DC to 2 GHz frequency
range. With the high linearity, excellent gain flatness and
low noise figure the MGA-31716 may be utilized as a driver
amplifier in the transmit chain and as a second stage LNA
in the receiver chain.
This device uses Avago Technologies proprietary 0.25
mm
GaAs Enhancement mode PHEMT process.
Features
•
Very high linearity at low DC bias power
[1]
•
High Gain with good gain flatness
•
ROHS compliant
•
Good Noise Figure
•
Halogen free
•
Advanced enhancement-mode PHEMT Technology
•
QFN 3X3 16-Lead standard package
•
Lead-free MSL1
Specifications
At 900 MHz, Vd = 5 V, Id = 58 mA (typ) @ 25° C
•
OIP3 = 41.0 dBm
•
Noise Figure = 1.9 dB
•
Gain = 20.2 dB
•
P1dB = 21.2 dBm
•
IRL = 16.7dB, ORL = 15.9 dB
Note:
1. The MGA-31716 has a superior LFOM of 16.5 dB. Linearity-Figure-of-
Merit (LFOM) is the ratio of OIP3 to total DC bias power.
Pin connections and Package Marking
31716
YYWW
XXXX
TOP VIEW
Vbias 16
Vctrl 15
NC 14
Vd 13
NC 12
RFout 11
RFout 10
NC 9
8 NC
7 NC
6 NC
5 NC
Gnd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
1 NC
2 NC
3 RFin
4 NC
Vbias
NC - not connected
RFIN
Vctrl
Biasing Network
RFOUT
Vdd
BOTTOM VIEW
Notes:
Package marking provides orientation and identification
“31716” = Device Part Number
“YYWW” = Work Week and Year of manufacturing
“XXXX” = Last 4 digit of Lot Number
Figure 1. Simplified Application Circuit
Table 1. MGA-31716 Absolute Maximum Rating
[1]
T
A
= 25° C
Symbol
V
d, max
V
bias, max
V
ctrl, max
P
d
P
in
T
j
T
stg
T
amb
Thermal Resistance
Absolute Maximum
5.5
5.5
5.5
605
24
150
-65 to 150
-40 to 85
Parameter
Drain Voltage
Bias Voltage
Control Voltage
Power Dissipation
[2]
CW RF Input Power
Junction Temperature
Storage Temperature
Ambient Temperature
Units
V
V
V
mW
dBm
°C
°C
°C
Thermal Resistance
[3]
(V
d
= 5.0 V, T
c
= 85° C)
θ
jc
= 67.0°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage
2. Source lead temperature is 25° C. Derate 14.9
mW/°C for T
L
> 130.0° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
Table 2. MGA-31716 Electrical Specification
[1]
T
C
= 25° C, V
d
= 5.0 V, unless otherwise noted
Symbol
I
ds
Parameter and Test Condition
Quiescent Current
Frequency
450 MHz
900 MHz
1500 MHz
450 MHz
900 MHz
1500 MHz
450 MHz
900 MHz
1500 MHz
450 MHz
900 MHz
1500 MHz
450 MHz
900 MHz
1500 MHz
450 MHz
900 MHz
1500 MHz
450 MHz
900 MHz
1500 MHz
450 MHz
900 MHz
1500 MHz
450 MHz
900 MHz
1500 MHz
450 MHz
900 MHz
1500 MHz
Units
mA
Min.
37
Typ.
63
58
54
1.8
1.9
1.8
21.0
20.2
19.6
40.5
41.0
41.0
15.5
16.5
16.8
Max.
83
NF
Noise Figure
dB
–
2.7
Gain
Gain
dB
18.5
21.5
OIP3
[2, 4]
Output Third Order Intercept Point
dBm
37
–
LFOM
[3]
Linearity Figure of Merit
dBm
P1dB
Output Power at 1dB Gain Compression
dBm
19.5
22.1
21.2
21.1
45.3
43.9
42.5
15.3
16.7
18.7
13.8
15.9
12.0
25.2
25.7
26.7
–
PAE
Power Added Efficiency at P1dB
%
IRL
Input Return Loss
dB
ORL
Output Return Loss
dB
ISOL
Isolation
dB
Notes:
1. Measurements obtained from test circuit and demoboard detailed in Figures 46 and 47 and Table 3.
2. OIP3 test condition: F1 – F2 = 1 MHz, with input power of -12 dBm per tone measured at worst case side band.
3. LFOM is defined as LFOM = OIP3 (in dBm) – P
DC
(in dBm). It is a measure of the linearity of an amplifier per unit of DC power consumed.
4. Demoboard tuned to best OIP3 with minimum over-temperature drift.
2
MGA-31716 Consistency Distribution Chart
[1, 2]
LSL
USL
USL
40
50
60
70
80
1.6
1.8
2
2.2
2.4
2.6
Figure 2. Id @ 900 MHz; LSL = 37 mA, Nominal = 58 mA, USL = 83 mA
Figure 3. NF @ 900 MHz; Nominal = 1.9 dB, USL = 2.7 dB
LSL
USL
LSL
19
20
21
36
38
40
42
44
46
48
50
52
54
56
Figure 4. Gain @ 900 MHz; LSL = 18.5 dB, Nominal = 20.2 dB, USL = 21.5 dB
Figure 5. OIP3 @ 900 MHz; Nominal = 41 dBm, LSL = 37 dBm
LSL
20
21
22
23
24
Figure 6. P1dB @ 900 MHz; Nominal = 21.2 dBm, LSL = 19.5 dBm
Notes:
1. Data sample size is 4000 samples taken from 4 different wafers and 2 different lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements are made on production test board which represents a trade-off between optimal Gain, NF, OIP3 and P1dB. Circuit losses have been
de-embedded from actual measurements.
3
MGA-31716 Typical Performance Data for 450 MHz
T
C
= 25° C, V
d
= 5.0 V, I
d
= 63 mA (Based on BOM for 450 MHz optimal linearity tuning in Table 3)
42
40
38
OIP3 (dBm)
36
34
32
30
28
-20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9
Pin (dBm)
25° C
-40° C
85° C
-8
-7
OIP3 (dBm)
44
42
40
38
36
34
32
30
28
26
24
150
25° C
-40° C
85° C
250
350
450
550
Frequency (MHz)
650
750
Figure 7. OIP3 vs Pin and Temperature
Figure 8. OIP3 vs Frequency and Temperature
22
21
20
Gain (dB)
19
18
17
16
15
150
250
350
450
550
Frequency (MHz)
650
25° C
-40° C
85° C
750
Input Return Loss (dB)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
150
25° C
-40° C
85° C
250
350
450
550
Frequency (MHz)
650
750
Figure 9. Gain vs Frequency and Temperature
Figure 10. IRL vs Frequency and Temperature
0
-5
Output Return Loss (dB)
-10
-15
-20
-25
-30
-35
150
250
350
450
550
Frequency (MHz)
650
25° C
-40° C
85° C
Isolation (dB)
-24
-25
-26
-27
-28
-29
-30
750
-31
150
250
350
450
550
Frequency (MHz)
650
25° C
-40° C
85° C
750
Figure 11. ORL vs Frequency and Temperature
Figure 12. Isolation vs Frequency and Temperature
4
MGA-31716 Typical Performance Data for 450 MHz
T
C
= 25° C, V
d
= 5.0 V, I
d
= 63 mA (Based on BOM in Table 3, tuned for optimal linearity with over temperature)
23
22
Noise Figure (dB)
25° C
-40° C
85° C
150
250
350
450
550
Frequency (MHz)
650
750
21
P1dB (dBm)
20
19
18
17
16
3.0
2.5
2.0
1.5
1.0
0.5
0.0
150
250
350
450
550
Frequency (MHz)
650
25° C
-40° C
85° C
750
Figure 13. P1dB vs Frequency and Temperature
Figure 14. Noise Figure vs Frequency and Temperature
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Vd (Volt)
Figure 15. Current vs Voltage and Temperature
100
90
80
70
60
50
40
30
20
10
0
25° C
-40° C
85° C
OIP3 (dBm)
41.0
40.5
40.0
39.5
39.0
38.5
1000
OIP3 at R2 = 560
Ω
Current at R2 = 560
Ω
1100
65
64
63
61
60
59
58
57
1500
Id (mA)
62
Id (mA)
1200
1300
1400
R1 (Ohm)
Figure 16. OIP3 and Quiescent Current with different R1
[1]
41.5
41.0
40.5
OIP3 (dBm)
40.0
39.5
39.0
38.5
38.0
470
OIP3 at R1 = 1.2 kΩ
Current at R1 = 1.2 kΩ
500
530
560
590
R2 (Ohm)
620
650
67
66
65
64
62
61
60
59
58
680
Id (mA)
63
Figure 17. OIP3 and Quiescent Current with different R2
[1]
Note:
1. Vbias and Vctrl can be externally controlled by change external biasing resistors R1 = Rbias and R2 = Rctrl (as shown in Fig. 46).
5
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