MGA-683P8
Low Noise And High Linearity Active Bias
Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-683P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA
has low noise and high linearity achieved through the
use of Avago Technologies’ proprietary 0.25
m
GaAs
Enhancement-mode pHEMT process. It is housed in a
miniature 2.0 x 2.0 x 0.75 mm
3
8-pin Quad-Flat-Non-Lead
(QFN) package. It is designed for optimum use from 450
MHz up to 2 GHz. The compact footprint and low profile
coupled with low noise, high gain and high linearity make
the MGA-683P8 an ideal choice as a low noise amplifier for
cellular infrastructure for GSM and CDMA. For optimum
performance at higher frequency from 1.5 GHz to 4 GHz,
the MGA-684P8 is recommended. Both MGA-683P8 and
MGA-684P8 share the same package and pinout.
Features
Low noise Figure
High linearity performance
GaAs E-pHEMT Technology
[1]
Low cost small package size: 2.0 x 2.0 x 0.75 mm
3
Excellent uniformity in product specifications
Tape-and-Reel packaging option available
Specifications
900 MHz; 5 V, 40 mA
17.8 dB Gain
0.56 dB Noise Figure
More than 20 dB Input Return Loss
32.8 dBm Output IP3
21.5 dBm Output Power at 1dB gain compression
Pin Configuration and Package Marking
2.0
x 2.0 x 0.75 mm
3
8-lead QFN
[1]
[2]
[3]
[4]
Top View
[8]
[8]
[7]
[6]
[5]
Bottom View
[1]
[2]
[3]
[4]
Applications
Low noise amplifier for cellular infrastructure for GSM
and CDMA.
Other low noise application.
Repeater, Metrocell/Picocell application.
83X
[7]
[6]
[5]
Simplified Schematic
Vdd
C5
R1
C3
Rbias
R2
C6
Pin 1
Pin 2
Pin 3
Pin 4
– Vbias
– RFinput
– Not Used
– Not Used
Pin 5 – Not Used
Pin 6 – Not Used
Pin 7 – RFoutput/Vdd
Pin 8 – Not Used
Centre tab - Ground
C4
Note:
Package marking provides orientation and identification
“83” = Device Code
“X” = Month Code
L1
RFin
L3
C1
[1]
[2]
[3]
[4]
L2
[8]
[7]
[6]
[5]
C2
RFout
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V (Class A)
ESD Human Body Model = 500 V (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note:
The schematic is shown with the assumption that similar PCB is used
for both MGA-683P8 and MGA-684P8.
Detail of the components needed for this product is shown in Table 1.
Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
Good RF practice requires all unused pins to be earthed.
Absolute Maximum Rating
[1]
T
A
=25° C
Symbol
V
dd
Idd
P
max
P
diss
T
j
T
stg
Thermal Resistance
Units
V
mA
dBm
W
°C
°C
Parameter
Device Voltage,
RF output to ground
Drain Current
CW RF Input Power
(V
dd
= 5.0 V, I
d
= 54 mA)
Total Power Dissipation
[2]
Junction Temperature
Storage Temperature
Absolute Maximum
5.5
90
+20
0.495
150
-65 to 150
Thermal Resistance
[3]
(V
dd
= 5.0 V, I
dd
= 40 mA)
jc
= 72°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red
Measurement Technique.
3. Power dissipation with unit turned on. Board
temperature T
B
is 25° C. Derate at 13.89 mW/°C
for T
B
> 114° C.
Electrical Specifications
[1, 4]
RF performance at T
A
= 25° C, V
dd
= 5 V, R
bias
= 12 kOhm, 900 MHz, measured on demo board in Figure 5 with component
list in Table 1 for 900 MHz matching.
Symbol
I
dd
Gain
OIP3
[2]
NF
[3]
OP1dB
IRL
ORL
REV ISOL
Parameter and Test Condition
Drain Current
Gain
Output Third Order Intercept Point
Noise Figure
Output Power at 1dB Gain Compression
Input Return Loss, 50
source
Output Return Loss, 50
load
Reverse Isolation
Units
mA
dB
dBm
dB
dBm
dB
dB
dB
Min.
25
16.3
28.5
Typ.
40.3
17.8
32.8
0.56
21.5
24
13
21
Max.
53
19.3
0.8
Notes:
1. Measurements at 900 MHz obtained using demo board described in Figure 1.
2. OIP3 test condition: F
RF1
= 900 MHz, F
RF2
= 901 MHz with input power of -10 dBm per tone.
3. For NF data, board losses of the input have not been de-embedded.
4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2
Product Consistency Distribution Charts
LSL
LSL
Id
Max : 53
Min : 25
Mean : 40.3
USL
USL
USL
Noise Figure
Max : 0.8
Mean : 0.56
30
Figure 1. Idd @ 900 MHz, Mean = 40.3
40
50
0.5
0.6
0.7
0.8
Figure 2. Noise Figure @ 900 MHz, Mean = 0.56
LSL
LSL
Gain
Max : 19.3
Min : 16.3
Mean : 17.8
USL
OIP3
Min : 28.5
Mean : 32.8
26
27
28
29
30
31
32
33
34
35
36
37
16
17
18
19
Figure 3. OIP3 @ 900 MHz, Mean = 32.8
Figure 4. Gain @ 900 MHz, Mean = 17.8
Notes:
1. Distribution data samples are 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
2. Circuit Losses have not been de-embedded from the actual measurements.
3
Demo Board Layout
Vbias
Gnd
Gnd
Vdd
Jul 10
Demo Board Schematic
Rbias
C5
C6
R1
C3
L1
C1
L3
L2
C2
R2
C4
C5
NU
Rbias
12KΩ
R1
0Ω
Vdd
C6
4.7uF
C3
4.7uF
R2
9.1Ω
C4
27pF
L1
15nH
C1
8.2pF
L2
33nH
C2
100pF
RFin
[1]
[2]
[8]
[7]
[6]
[5]
RFout
Avago
Technologies
Figure 5. Demo Board Layout Diagram
Rapala W
MGA-68XP8
L3
18nH
[3]
[4]
Figure 6. Demo Board Schematic Diagram
Notes:
The schematic is shown with the assumption that similar PCB is used
for both MGA-683P8 and MGA-68P8.
Detail of the components needed for this product is shown in Table 1.
– Recommended PCB material is 10 mils Rogers RO4350.
– Suggested component values may vary according to
layout and PCB material.
Table 1. Component list for 900 MHz matching
Part
C1
C2
L1
L2
L3
C4
C3, C6
Rbias
R1
R2
Size
0402
0402
0402
0402
0402
0402
0402
0402
0402
0402
Value
8.2 pF
100 pF
15 nH
33 nH
18 nH
27 pF
4.7
F
12 KOhm
0 Ohm
9.1 Ohm
Detail Part Number
Murata GRM15
Murata GRM15
Toko LL1005
Toko LL1005
Toko LL1005
Murata GRM15
Murata GRM15
KOA RK73
KOA RK73
KOA RK73
Notes:
C2 is a blocking capacitor
L2 output match for OIP3
L1, C1 and L3 are used for IRL matching.
C3, C4 and C6 are bypass capacitors
C5 is not use for this product
R2 is stabilizing resistor
Rbias
is the biasing resistor
4
MGA-683P8 Typical Performance in Demoboard
RF performance at T
A
= 25° C, Vdd = 5 V, measured on demo board in Figure 5 with component list in Table1 for 900 MHz
matching, unless otherwise stated.
1.2
1
NF
(dB)
0.8
0.6
0.4
0.2
0
500
1000
Frequency (MHz)
1500
2000
-40° C
25° C
85° C
Gain (dB)
25
20
15
10
5
0
-40° C
25° C
85° C
0
500
1000
Frequency (MHz)
1500
2000
Figure 7. NF vs Frequency vs Temperature
Figure 8. Gain vs Frequency vs Temperature
38
36
P1dB (dBm)
-40° C
25° C
85° C
0
500
1000
Frequency (MHz)
1500
2000
OIP3 (dBm)
34
32
30
28
26
23.5
22.5
21.5
20.5
19.5
18.5
17.5
0
500
1000
Frequency (MHz)
1500
2000
-40° C
25° C
85° C
Figure 9. OIP3 vs Frequency vs Temperature
Figure 10. OP1dB vs Frequency vs Temperature
5
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
